Negative differential resistance in InGaAs/AlAsSb/InGaAs single-barrier heterostructure

Wei-Kuo Chen; R. H. Cheng; J. Ou

doi:10.1063/1.119898

Negative differential resistance in InGaAs/AlAsSb/InGaAs single-barrier heterostructure

Wei-Kuo Chen^*, R. H. Cheng, J. Ou

^*此作品的通信作者

電子物理學系

研究成果: Article › 同行評審

8 引文斯高帕斯（Scopus）

摘要

We have observed negative differential resistance in InP lattice-matched InGaAs/AlAsSb/InGaAs single-barrier tunneling heterostructure. With a 10-nm-thick barrier, the diode exhibits a peak-to-valley current ratio of 4.2 (1.2) and peak current density of 54 (158) A/cm² at 100 K (300 K).

原文	English
頁（從 - 到）	1373-1375
頁數	3
期刊	Applied Physics Letters
卷	71
發行號	10
DOIs	https://doi.org/10.1063/1.119898
出版狀態	Published - 8 9月 1997

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title = "Negative differential resistance in InGaAs/AlAsSb/InGaAs single-barrier heterostructure",

abstract = "We have observed negative differential resistance in InP lattice-matched InGaAs/AlAsSb/InGaAs single-barrier tunneling heterostructure. With a 10-nm-thick barrier, the diode exhibits a peak-to-valley current ratio of 4.2 (1.2) and peak current density of 54 (158) A/cm2 at 100 K (300 K).",

author = "Wei-Kuo Chen and Cheng, {R. H.} and J. Ou",

year = "1997",

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AU - Chen, Wei-Kuo

AU - Cheng, R. H.

AU - Ou, J.

PY - 1997/9/8

Y1 - 1997/9/8

N2 - We have observed negative differential resistance in InP lattice-matched InGaAs/AlAsSb/InGaAs single-barrier tunneling heterostructure. With a 10-nm-thick barrier, the diode exhibits a peak-to-valley current ratio of 4.2 (1.2) and peak current density of 54 (158) A/cm2 at 100 K (300 K).

AB - We have observed negative differential resistance in InP lattice-matched InGaAs/AlAsSb/InGaAs single-barrier tunneling heterostructure. With a 10-nm-thick barrier, the diode exhibits a peak-to-valley current ratio of 4.2 (1.2) and peak current density of 54 (158) A/cm2 at 100 K (300 K).

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U2 - 10.1063/1.119898

DO - 10.1063/1.119898

M3 - Article

AN - SCOPUS:0001051492

SN - 0003-6951

VL - 71

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EP - 1375

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

ER -

Negative differential resistance in InGaAs/AlAsSb/InGaAs single-barrier heterostructure

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