@inproceedings{52acbb1ae43847cca1ce3ba6edea33a6,
title = "Nearly Ideal Subthreshold Swing in Monolayer MoS Top-Gate nFETs with Scaled EOT of 1 nm",
abstract = "Transistor scaling enabled by gate length scaling requires EOT scaling to less than 1 nm thickness [1]. This work successfully integrates Hf-based ALD higher-k dielectrics with CVD-grown monolayer (1L) MoS2 to build top-gate nFET with EOT 1 nm with nearly ideal subthreshold swing of 68 mV/dec. The gate stack described here achieves a high varepsilon-{ mathrm{e} mathrm{f} mathrm{f}} 13.53, a large mathrm{E}-{ mathrm{B} mathrm{D}} 12.4MV/cm, and excellent leakage current density. This is a remarkable performance among reported gate dielectrics on the transition metal dichalcogenides (TMDs) on which it is notoriously difficult to deposit a pinhole-free dielectric.",
author = "Lee, {Tsung En} and Su, {Yuan Chun} and Lin, {Bo Jiun} and Chen, {Yi Xuan} and Yun, {Wei Sheng} and Ho, {Po Hsun} and Wang, {Jer Fu} and Su, {Sheng Kai} and Hsu, {Chen Feng} and Mao, {Po Sen} and Chang, {Yu Cheng} and Chien, {Chao Hsin} and Liu, {Bo Heng} and Su, {Chien Ying} and Kei, {Chi Chung} and Han Wang and {Philip Wong}, {H. S.} and Lee, {T. Y.} and Chang, {Wen Hao} and Cheng, {Chao Ching} and Radu, {Iuliana P.}",
note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 International Electron Devices Meeting, IEDM 2022 ; Conference date: 03-12-2022 Through 07-12-2022",
year = "2022",
doi = "10.1109/IEDM45625.2022.10019552",
language = "English",
series = "Technical Digest - International Electron Devices Meeting, IEDM",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "741--744",
booktitle = "2022 International Electron Devices Meeting, IEDM 2022",
address = "美國",
}