Near-ultraviolet InGaN/GaN light-emitting diodes grown on patterned sapphire substrates

Woei Kai Wang*, Dong Sing Wuu, Wen Chung Shih, Jau Shing Fang, Chia En Lee, Wen Yu Lin, Pin Han, Ray-Hua Horng, Ta Cheng Hsu, Tai Chan Huo, Ming Jiunn Jou, Aikey Lin, Yuan Hsin Yu

*此作品的通信作者

研究成果: Article同行評審

35 引文 斯高帕斯(Scopus)

摘要

We describe the microstructure and optical properties of near-ultraviolet InGaN-GaN light-emitting diodes (LEDs) fabricated onto conventional and patterned sapphire substrates (PSSs) using metalorganic chemical vapor deposition. The PSS LED with an optimized hole depth (1.5 μm) shows an improvement of the room-temperature photoluminescence intensity by one order of magnitude compared with that of the conventional LED. As much as a 63% increased light emission intensity of the PSS LED was obtained at a forward current of 20 mA. For a typical lamp-form PSS LED (at 20 mA), the output power and external quantum efficiency were estimated to be 10.4mW and 14.1%, respectively. The increase of the output power could be partly due to the improvement of the internal quantum efficiency upon decreasing the dislocation density, which was further confirmed by the transmission-electron-microscopy and etch-pit-density studies for the GaN-on-PSS samples. Moreover, the emitted light scattering at the GaN/PSS interface could also contribute to the enhancement of light extraction efficiency.

原文English
頁(從 - 到)2512-2515
頁數4
期刊Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
44
發行號4 B
DOIs
出版狀態Published - 4月 2005

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