Near-field optical microscopy and scanning Kelvin microscopy studies of V-defects on AIGaN/GaN films

C. S. Ku; J. M. Peng; W. C. Ke; H. Y. Huang; N. E. Tang; Wei-Kuo Chen; W. H. Chen; M. C. Lee

doi:10.1063/1.1799248

Near-field optical microscopy and scanning Kelvin microscopy studies of V-defects on AIGaN/GaN films

C. S. Ku^*, J. M. Peng, W. C. Ke, H. Y. Huang, N. E. Tang, Wei-Kuo Chen, W. H. Chen, M. C. Lee

^*此作品的通信作者

電子物理學系

研究成果: Article › 同行評審

5 引文斯高帕斯（Scopus）

摘要

The V-shape pit on the Al_0.16Ga_0.84N film was investigated. The study was carried out by using an UV excitation near-field scanning optical microscopy (NSOM) system different from cathodoluminescence type that avoids high energy electron damage. It was found that intensity of the extra peak band increased gradually from V-defect edges to its center. The results show that deep levels inside the V-pit were likely attributed to V _ga-related defects.

原文	English
頁（從 - 到）	2818-2820
頁數	3
期刊	Applied Physics Letters
卷	85
發行號	14
DOIs	https://doi.org/10.1063/1.1799248
出版狀態	Published - 4 10月 2004

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10.1063/1.1799248

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abstract = "The V-shape pit on the Al0.16Ga0.84N film was investigated. The study was carried out by using an UV excitation near-field scanning optical microscopy (NSOM) system different from cathodoluminescence type that avoids high energy electron damage. It was found that intensity of the extra peak band increased gradually from V-defect edges to its center. The results show that deep levels inside the V-pit were likely attributed to V ga-related defects.",

author = "Ku, {C. S.} and Peng, {J. M.} and Ke, {W. C.} and Huang, {H. Y.} and Tang, {N. E.} and Wei-Kuo Chen and Chen, {W. H.} and Lee, {M. C.}",

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AU - Ku, C. S.

AU - Peng, J. M.

AU - Ke, W. C.

AU - Huang, H. Y.

AU - Tang, N. E.

AU - Chen, Wei-Kuo

AU - Chen, W. H.

AU - Lee, M. C.

PY - 2004/10/4

Y1 - 2004/10/4

N2 - The V-shape pit on the Al0.16Ga0.84N film was investigated. The study was carried out by using an UV excitation near-field scanning optical microscopy (NSOM) system different from cathodoluminescence type that avoids high energy electron damage. It was found that intensity of the extra peak band increased gradually from V-defect edges to its center. The results show that deep levels inside the V-pit were likely attributed to V ga-related defects.

AB - The V-shape pit on the Al0.16Ga0.84N film was investigated. The study was carried out by using an UV excitation near-field scanning optical microscopy (NSOM) system different from cathodoluminescence type that avoids high energy electron damage. It was found that intensity of the extra peak band increased gradually from V-defect edges to its center. The results show that deep levels inside the V-pit were likely attributed to V ga-related defects.

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Near-field optical microscopy and scanning Kelvin microscopy studies of V-defects on AIGaN/GaN films

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