NBTI effects of pMOSFETs with different nitrogen dose implantation

Y. J. Lee; Y. C. Tang; M. H. Wu; Tien-Sheng Chao; P. T. Ho; David Lai; W. L. Yang; T. Y. Huang

doi:10.1109/RELPHY.2004.1315449

NBTI effects of pMOSFETs with different nitrogen dose implantation

Y. J. Lee, Y. C. Tang, M. H. Wu, Tien-Sheng Chao, P. T. Ho, David Lai, W. L. Yang, T. Y. Huang

電子物理學系

研究成果: Conference article › 同行評審

1 引文斯高帕斯（Scopus）

摘要

NBTI effects with different nitrogen dose implantation and regions were investigated. High nitrogen dose implantation in the channel or source/drain extension results in serious NBTI degradation. Both the dynamic NBTI effects and substrate hot holes effects were also discussed. DNBTI and I_CP were measured simultaneously. Reduction of ΔV_TH and I_CP after positive gate bias stressing is related with the recovery of interface states.

原文	English
文章編號	1315449
頁（從 - 到）	681-682
頁數	2
期刊	IEEE International Reliability Physics Symposium Proceedings
卷	2004-January
發行號	January
DOIs	https://doi.org/10.1109/RELPHY.2004.1315449
出版狀態	Published - 1 1月 2004
事件	42nd Annual IEEE International Reliability Physics Symposium, IRPS 2004 - Phoenix, United States 持續時間: 25 4月 2004 → 29 4月 2004

存取文件

10.1109/RELPHY.2004.1315449

其它文件與鏈接

Link to publication in Scopus

引用此

@article{5d0ee692238e44e99ce9926f09595a2d,

title = "NBTI effects of pMOSFETs with different nitrogen dose implantation",

abstract = "NBTI effects with different nitrogen dose implantation and regions were investigated. High nitrogen dose implantation in the channel or source/drain extension results in serious NBTI degradation. Both the dynamic NBTI effects and substrate hot holes effects were also discussed. DNBTI and ICP were measured simultaneously. Reduction of ΔVTH and ICP after positive gate bias stressing is related with the recovery of interface states.",

author = "Lee, {Y. J.} and Tang, {Y. C.} and Wu, {M. H.} and Tien-Sheng Chao and Ho, {P. T.} and David Lai and Yang, {W. L.} and Huang, {T. Y.}",

year = "2004",

month = jan,

day = "1",

doi = "10.1109/RELPHY.2004.1315449",

language = "English",

volume = "2004-January",

pages = "681--682",

journal = "IEEE International Reliability Physics Symposium Proceedings",

issn = "1541-7026",

number = "January",

note = "null ; Conference date: 25-04-2004 Through 29-04-2004",

}

TY - JOUR

T1 - NBTI effects of pMOSFETs with different nitrogen dose implantation

AU - Lee, Y. J.

AU - Tang, Y. C.

AU - Wu, M. H.

AU - Chao, Tien-Sheng

AU - Ho, P. T.

AU - Lai, David

AU - Yang, W. L.

AU - Huang, T. Y.

PY - 2004/1/1

Y1 - 2004/1/1

N2 - NBTI effects with different nitrogen dose implantation and regions were investigated. High nitrogen dose implantation in the channel or source/drain extension results in serious NBTI degradation. Both the dynamic NBTI effects and substrate hot holes effects were also discussed. DNBTI and ICP were measured simultaneously. Reduction of ΔVTH and ICP after positive gate bias stressing is related with the recovery of interface states.

AB - NBTI effects with different nitrogen dose implantation and regions were investigated. High nitrogen dose implantation in the channel or source/drain extension results in serious NBTI degradation. Both the dynamic NBTI effects and substrate hot holes effects were also discussed. DNBTI and ICP were measured simultaneously. Reduction of ΔVTH and ICP after positive gate bias stressing is related with the recovery of interface states.

UR - http://www.scopus.com/inward/record.url?scp=68249153997&partnerID=8YFLogxK

U2 - 10.1109/RELPHY.2004.1315449

DO - 10.1109/RELPHY.2004.1315449

M3 - Conference article

AN - SCOPUS:68249153997

SN - 1541-7026

VL - 2004-January

SP - 681

EP - 682

JO - IEEE International Reliability Physics Symposium Proceedings

JF - IEEE International Reliability Physics Symposium Proceedings

IS - January

M1 - 1315449

Y2 - 25 April 2004 through 29 April 2004

ER -

NBTI effects of pMOSFETs with different nitrogen dose implantation

摘要

存取文件

其它文件與鏈接

指紋

引用此