NBTI effects with different nitrogen dose implantation and regions were investigated. High nitrogen dose implantation in the channel or source/drain extension results in serious NBTI degradation. Both the dynamic NBTI effects and substrate hot holes effects were also discussed. DNBTI and ICP were measured simultaneously. Reduction of ΔVTH and ICP after positive gate bias stressing is related with the recovery of interface states.
|頁（從 - 到）||681-682|
|期刊||IEEE International Reliability Physics Symposium Proceedings|
|出版狀態||Published - 1 1月 2004|
|事件||42nd Annual IEEE International Reliability Physics Symposium, IRPS 2004 - Phoenix, United States|
持續時間: 25 4月 2004 → 29 4月 2004