Nanostructured LEDs

Chien-Chung Lin; D. W. Lin; C. H. Chiu; Z. Y. Li; Yu-Pin Lan; J. J. Huang; Hao-Chung Kuo

doi:10.1533/9780857099303.1.216

Nanostructured LEDs

Chien-Chung Lin^*
, D. W. Lin
, C. H. Chiu
, Z. Y. Li
, Yu-Pin Lan
, J. J. Huang
, Hao-Chung Kuo

^*此作品的通信作者

研究成果: Chapter › 同行評審

摘要

This chapter describes how, in order to achieve high efficiency light-emitting diodes (LEDs) and enhance the crystal quality of the epitaxial layer, we investigated the following nanotechnologies to enhance our LED devices: SiO₂-based nanorod-array patterned sapphire substrates (NAPSSs), native-grown GaN nanopillars (NPs) and etched nanopillars using embedded SiO₂ nanomasks. Our studies showed these approaches can achieve high-quality nanocrystalline growth and robust fabrication to produce high-performance LEDs. These novel nanotechnologies could be effective for improving GaN-based optoelectronic device performance in the future.

原文	English
主出版物標題	Nitride Semiconductor Light-Emitting Diodes (LEDs)
主出版物子標題	Materials, Technologies and Applications
發行者	Elsevier Ltd
頁面	216-249
頁數	34
ISBN（列印）	9780857095077
DOIs	https://doi.org/10.1533/9780857099303.1.216
出版狀態	Published - 1 12月 2013

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10.1533/9780857099303.1.216

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title = "Nanostructured LEDs",

abstract = "This chapter describes how, in order to achieve high efficiency light-emitting diodes (LEDs) and enhance the crystal quality of the epitaxial layer, we investigated the following nanotechnologies to enhance our LED devices: SiO2-based nanorod-array patterned sapphire substrates (NAPSSs), native-grown GaN nanopillars (NPs) and etched nanopillars using embedded SiO2 nanomasks. Our studies showed these approaches can achieve high-quality nanocrystalline growth and robust fabrication to produce high-performance LEDs. These novel nanotechnologies could be effective for improving GaN-based optoelectronic device performance in the future.",

keywords = "Gallium nitride, GaN, Light-emitting diodes, Nanotechnology",

author = "Chien-Chung Lin and Lin, \{D. W.\} and Chiu, \{C. H.\} and Li, \{Z. Y.\} and Yu-Pin Lan and Huang, \{J. J.\} and Hao-Chung Kuo",

year = "2013",

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TY - CHAP

T1 - Nanostructured LEDs

AU - Lin, Chien-Chung

AU - Lin, D. W.

AU - Chiu, C. H.

AU - Li, Z. Y.

AU - Lan, Yu-Pin

AU - Huang, J. J.

AU - Kuo, Hao-Chung

PY - 2013/12/1

Y1 - 2013/12/1

N2 - This chapter describes how, in order to achieve high efficiency light-emitting diodes (LEDs) and enhance the crystal quality of the epitaxial layer, we investigated the following nanotechnologies to enhance our LED devices: SiO2-based nanorod-array patterned sapphire substrates (NAPSSs), native-grown GaN nanopillars (NPs) and etched nanopillars using embedded SiO2 nanomasks. Our studies showed these approaches can achieve high-quality nanocrystalline growth and robust fabrication to produce high-performance LEDs. These novel nanotechnologies could be effective for improving GaN-based optoelectronic device performance in the future.

AB - This chapter describes how, in order to achieve high efficiency light-emitting diodes (LEDs) and enhance the crystal quality of the epitaxial layer, we investigated the following nanotechnologies to enhance our LED devices: SiO2-based nanorod-array patterned sapphire substrates (NAPSSs), native-grown GaN nanopillars (NPs) and etched nanopillars using embedded SiO2 nanomasks. Our studies showed these approaches can achieve high-quality nanocrystalline growth and robust fabrication to produce high-performance LEDs. These novel nanotechnologies could be effective for improving GaN-based optoelectronic device performance in the future.

KW - Gallium nitride

KW - GaN

KW - Light-emitting diodes

KW - Nanotechnology

UR - https://www.scopus.com/pages/publications/84902571203

U2 - 10.1533/9780857099303.1.216

DO - 10.1533/9780857099303.1.216

M3 - Chapter

AN - SCOPUS:84902571203

SN - 9780857095077

SP - 216

EP - 249

BT - Nitride Semiconductor Light-Emitting Diodes (LEDs)

PB - Elsevier Ltd

ER -

Nanostructured LEDs

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