Nanostructured LEDs

Chien-Chung Lin*, D. W. Lin, C. H. Chiu, Z. Y. Li, Yu-Pin Lan, J. J. Huang, Hao-Chung Kuo

*此作品的通信作者

研究成果: Chapter同行評審

摘要

This chapter describes how, in order to achieve high efficiency light-emitting diodes (LEDs) and enhance the crystal quality of the epitaxial layer, we investigated the following nanotechnologies to enhance our LED devices: SiO2-based nanorod-array patterned sapphire substrates (NAPSSs), native-grown GaN nanopillars (NPs) and etched nanopillars using embedded SiO2 nanomasks. Our studies showed these approaches can achieve high-quality nanocrystalline growth and robust fabrication to produce high-performance LEDs. These novel nanotechnologies could be effective for improving GaN-based optoelectronic device performance in the future.

原文English
主出版物標題Nitride Semiconductor Light-Emitting Diodes (LEDs)
主出版物子標題Materials, Technologies and Applications
發行者Elsevier Ltd
頁面216-249
頁數34
ISBN(列印)9780857095077
DOIs
出版狀態Published - 1 十二月 2013

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