Nanostructured LED

Chien Chung Lin; Ching Hsueh Chiu; Da Wei Lin; Zhen Yu Li; Yu Pin Lan; Jian Jang Huang; Hao Chung Kuo

doi:10.1016/B978-0-08-101942-9.00007-1

Nanostructured LED

Chien Chung Lin^*, Ching Hsueh Chiu, Da Wei Lin, Zhen Yu Li, Yu Pin Lan, Jian Jang Huang, Hao Chung Kuo

^*此作品的通信作者

研究成果: Chapter › 同行評審

摘要

In this chapter, we use nanotechnology to achieve high efficiency light emitting diodes (LEDs) and enhance crystal quality of epitaxial layer. We also adapt nanotechnology to enhance our LED devices: SiO₂ nanorod-array patterned sapphire substrate (NAPSS), native grown GaN nanopillar, and embedded SiO₂ nanomask etched nanopillar. Thus, we can achieve high crystal quality and fabrication of high-performance LED devices. We hope using novel nanotechnology will be effective in improving the quality of GaN-based optoelectronic devices in future.

原文	English
主出版物標題	Nitride Semiconductor Light-Emitting Diodes (LEDs)
主出版物子標題	Materials, Technologies, and Applications: Second Edition
發行者	Elsevier
頁面	243-271
頁數	29
ISBN（電子）	9780081019436
ISBN（列印）	9780081019429
DOIs	https://doi.org/10.1016/B978-0-08-101942-9.00007-1
出版狀態	Published - 2018

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10.1016/B978-0-08-101942-9.00007-1

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title = "Nanostructured LED",

abstract = "In this chapter, we use nanotechnology to achieve high efficiency light emitting diodes (LEDs) and enhance crystal quality of epitaxial layer. We also adapt nanotechnology to enhance our LED devices: SiO2 nanorod-array patterned sapphire substrate (NAPSS), native grown GaN nanopillar, and embedded SiO2 nanomask etched nanopillar. Thus, we can achieve high crystal quality and fabrication of high-performance LED devices. We hope using novel nanotechnology will be effective in improving the quality of GaN-based optoelectronic devices in future.",

keywords = "GaN, Light emitting diodes, Nanotechnology",

author = "Lin, {Chien Chung} and Chiu, {Ching Hsueh} and Lin, {Da Wei} and Li, {Zhen Yu} and Lan, {Yu Pin} and Huang, {Jian Jang} and Kuo, {Hao Chung}",

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doi = "10.1016/B978-0-08-101942-9.00007-1",

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TY - CHAP

T1 - Nanostructured LED

AU - Lin, Chien Chung

AU - Chiu, Ching Hsueh

AU - Lin, Da Wei

AU - Li, Zhen Yu

AU - Lan, Yu Pin

AU - Huang, Jian Jang

AU - Kuo, Hao Chung

PY - 2018

Y1 - 2018

N2 - In this chapter, we use nanotechnology to achieve high efficiency light emitting diodes (LEDs) and enhance crystal quality of epitaxial layer. We also adapt nanotechnology to enhance our LED devices: SiO2 nanorod-array patterned sapphire substrate (NAPSS), native grown GaN nanopillar, and embedded SiO2 nanomask etched nanopillar. Thus, we can achieve high crystal quality and fabrication of high-performance LED devices. We hope using novel nanotechnology will be effective in improving the quality of GaN-based optoelectronic devices in future.

AB - In this chapter, we use nanotechnology to achieve high efficiency light emitting diodes (LEDs) and enhance crystal quality of epitaxial layer. We also adapt nanotechnology to enhance our LED devices: SiO2 nanorod-array patterned sapphire substrate (NAPSS), native grown GaN nanopillar, and embedded SiO2 nanomask etched nanopillar. Thus, we can achieve high crystal quality and fabrication of high-performance LED devices. We hope using novel nanotechnology will be effective in improving the quality of GaN-based optoelectronic devices in future.

KW - GaN

KW - Light emitting diodes

KW - Nanotechnology

UR - http://www.scopus.com/inward/record.url?scp=85054421777&partnerID=8YFLogxK

U2 - 10.1016/B978-0-08-101942-9.00007-1

DO - 10.1016/B978-0-08-101942-9.00007-1

M3 - Chapter

AN - SCOPUS:85054421777

SN - 9780081019429

SP - 243

EP - 271

BT - Nitride Semiconductor Light-Emitting Diodes (LEDs)

PB - Elsevier

ER -

Nanostructured LED

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