Nanostructured LED

Chien Chung Lin*, Ching Hsueh Chiu, Da Wei Lin, Zhen Yu Li, Yu Pin Lan, Jian Jang Huang, Hao Chung Kuo

*此作品的通信作者

研究成果: Chapter同行評審

摘要

In this chapter, we use nanotechnology to achieve high efficiency light emitting diodes (LEDs) and enhance crystal quality of epitaxial layer. We also adapt nanotechnology to enhance our LED devices: SiO2 nanorod-array patterned sapphire substrate (NAPSS), native grown GaN nanopillar, and embedded SiO2 nanomask etched nanopillar. Thus, we can achieve high crystal quality and fabrication of high-performance LED devices. We hope using novel nanotechnology will be effective in improving the quality of GaN-based optoelectronic devices in future.

原文English
主出版物標題Nitride Semiconductor Light-Emitting Diodes (LEDs)
主出版物子標題Materials, Technologies, and Applications: Second Edition
發行者Elsevier
頁面243-271
頁數29
ISBN(電子)9780081019436
ISBN(列印)9780081019429
DOIs
出版狀態Published - 1 一月 2018

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