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Nanosized-metal-grain-induced characteristic fluctuation in gate-all-around si nanowire metal-oxide-semiconductor devices

研究成果: Conference contribution › 同行評審

2 引文 斯高帕斯（Scopus）

指紋

深入研究「Nanosized-metal-grain-induced characteristic fluctuation in gate-all-around si nanowire metal-oxide-semiconductor devices」主題。共同形成了獨特的指紋。
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Keyphrases

Material Science

Physics

Engineering