@inproceedings{8f64208e6b0f4ed689406893a18af682,
title = "Nanosized-metal-grain-induced characteristic fluctuation in gate-all-around si nanowire metal-oxide-semiconductor devices",
abstract = "In this work, we investigate workfunction (WK) fluctuation of gate-all-around Si nanowire MOS devices by solving a sets of 2D Schr{\"o}dinger-Poisson equations. We discuss characteristic fluctuation in view of randomly interactive quantum confinement with subbands and wavefunctions. The influences of metal-grain size and channel width on the random WK-induced characteristic fluctuation are studied; additionally, the random positions of metal grain are discussed. The WK of metal grain in the corner of square-shaped channel possesses greater impact on characteristic fluctuation because of enhanced corner effect. Devices with a large channel width and small nanosized metal grains suffer from relatively smaller percentage of fluctuation.",
keywords = "Corner effect, Gate-All-Around, MOS devices, Nanowire, Random confinement effect, Schr{\"o}dinger-Poisson Equations, Threshold voltage fluctuation, Workfunction fluctuation",
author = "Lai, {Chun Ning} and Chen, {Chien Yang} and Yi-ming Li",
year = "2015",
month = oct,
day = "19",
doi = "10.1109/IWCE.2015.7301971",
language = "English",
series = "18th International Workshop on Computational Electronics, IWCE 2015",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "18th International Workshop on Computational Electronics, IWCE 2015",
address = "美國",
note = "18th International Workshop on Computational Electronics, IWCE 2015 ; Conference date: 02-09-2015 Through 04-09-2015",
}