Nanosheet High Mobility SnO2-SnO Complementary TFTs for System-on-Display and Monolithic Three-Dimensional Integrated Circuit

Albert Chin; Te Jui Yen; Vladimir Gritsenko

doi:10.1002/sdtp.15959

Nanosheet High Mobility SnO2-SnO Complementary TFTs for System-on-Display and Monolithic Three-Dimensional Integrated Circuit

Albert Chin, Te Jui Yen, Vladimir Gritsenko

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研究成果: Conference article › 同行評審

摘要

The top-gate 4.5-nm-thick SnO2 nanosheet nTFT has the high 136 cm²/Vs field-effect mobility (uFE), sharp 1.5x10⁸ on-current/ off-current (ION/IOFF), and fast turn-on subthreshold slope (SS) of 108 mV/decade. The top-gate 7-nm-thick nanosheet SnO pTFT has a high μFE of 4.4 cm²/Vs, large ION/IOFF of 1.2×10⁵, and SS of 526 mV/decade. These CTFTs will enable the system-on-panel (SoP) and Monolithic Three-Dimensional (3D) Integrated Circuit (IC).

原文	English
頁（從 - 到）	393-395
頁數	3
期刊	Digest of Technical Papers - SID International Symposium
卷	53
發行號	S1
DOIs	https://doi.org/10.1002/sdtp.15959
出版狀態	Published - 2022
事件	International Conference on Display Technology, ICDT 2022 - Fuzhou, China 持續時間: 9 7月 2022 → 12 7月 2022

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10.1002/sdtp.15959

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@article{20983e692c0d43548a831825d696f841,

title = "Nanosheet High Mobility SnO2-SnO Complementary TFTs for System-on-Display and Monolithic Three-Dimensional Integrated Circuit",

abstract = "The top-gate 4.5-nm-thick SnO2 nanosheet nTFT has the high 136 cm2/Vs field-effect mobility (uFE), sharp 1.5x108 on-current/ off-current (ION/IOFF), and fast turn-on subthreshold slope (SS) of 108 mV/decade. The top-gate 7-nm-thick nanosheet SnO pTFT has a high μFE of 4.4 cm2/Vs, large ION/IOFF of 1.2×105, and SS of 526 mV/decade. These CTFTs will enable the system-on-panel (SoP) and Monolithic Three-Dimensional (3D) Integrated Circuit (IC).",

keywords = "complementary TFTs, high mobility, nanosheet transistor, SnO pTFT, SnO2 nTFT, three-dimensional integrated circuit",

author = "Albert Chin and Yen, {Te Jui} and Vladimir Gritsenko",

note = "Publisher Copyright: {\textcopyright} 2022, John Wiley and Sons Inc. All rights reserved.; International Conference on Display Technology, ICDT 2022 ; Conference date: 09-07-2022 Through 12-07-2022",

year = "2022",

doi = "10.1002/sdtp.15959",

language = "English",

volume = "53",

pages = "393--395",

journal = "Digest of Technical Papers - SID International Symposium",

issn = "0097-966X",

number = "S1",

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TY - JOUR

T1 - Nanosheet High Mobility SnO2-SnO Complementary TFTs for System-on-Display and Monolithic Three-Dimensional Integrated Circuit

AU - Chin, Albert

AU - Yen, Te Jui

AU - Gritsenko, Vladimir

PY - 2022

Y1 - 2022

N2 - The top-gate 4.5-nm-thick SnO2 nanosheet nTFT has the high 136 cm2/Vs field-effect mobility (uFE), sharp 1.5x108 on-current/ off-current (ION/IOFF), and fast turn-on subthreshold slope (SS) of 108 mV/decade. The top-gate 7-nm-thick nanosheet SnO pTFT has a high μFE of 4.4 cm2/Vs, large ION/IOFF of 1.2×105, and SS of 526 mV/decade. These CTFTs will enable the system-on-panel (SoP) and Monolithic Three-Dimensional (3D) Integrated Circuit (IC).

AB - The top-gate 4.5-nm-thick SnO2 nanosheet nTFT has the high 136 cm2/Vs field-effect mobility (uFE), sharp 1.5x108 on-current/ off-current (ION/IOFF), and fast turn-on subthreshold slope (SS) of 108 mV/decade. The top-gate 7-nm-thick nanosheet SnO pTFT has a high μFE of 4.4 cm2/Vs, large ION/IOFF of 1.2×105, and SS of 526 mV/decade. These CTFTs will enable the system-on-panel (SoP) and Monolithic Three-Dimensional (3D) Integrated Circuit (IC).

KW - complementary TFTs

KW - high mobility

KW - nanosheet transistor

KW - SnO pTFT

KW - SnO2 nTFT

KW - three-dimensional integrated circuit

UR - http://www.scopus.com/inward/record.url?scp=85141896466&partnerID=8YFLogxK

U2 - 10.1002/sdtp.15959

DO - 10.1002/sdtp.15959

M3 - Conference article

AN - SCOPUS:85141896466

SN - 0097-966X

VL - 53

SP - 393

EP - 395

JO - Digest of Technical Papers - SID International Symposium

JF - Digest of Technical Papers - SID International Symposium

IS - S1

T2 - International Conference on Display Technology, ICDT 2022

Y2 - 9 July 2022 through 12 July 2022

ER -

Nanosheet High Mobility SnO2-SnO Complementary TFTs for System-on-Display and Monolithic Three-Dimensional Integrated Circuit

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