The top-gate 4.5-nm-thick SnO2 nanosheet nTFT has the high 136 cm2/Vs field-effect mobility (uFE), sharp 1.5x108 on-current/ off-current (ION/IOFF), and fast turn-on subthreshold slope (SS) of 108 mV/decade. The top-gate 7-nm-thick nanosheet SnO pTFT has a high μFE of 4.4 cm2/Vs, large ION/IOFF of 1.2×105, and SS of 526 mV/decade. These CTFTs will enable the system-on-panel (SoP) and Monolithic Three-Dimensional (3D) Integrated Circuit (IC).
|頁（從 - 到）||393-395|
|期刊||Digest of Technical Papers - SID International Symposium|
|出版狀態||Published - 2022|
|事件||International Conference on Display Technology, ICDT 2022 - Fuzhou, China|
持續時間: 9 7月 2022 → 12 7月 2022