摘要
In this paper, we demonstrate 50-nm trigate nonvolatile HfO 2 nanocrystal memory devices on silicon-on-insulator wafers. The proposed technique, which is fully compatible with current CMOS technologies, is used to form highly localized HfO 2 nanocrystals for application in nonvolatile flash memory. We successfully scale down conventional nonvolatile floating gate memories below the 50-nm node to achieve nanodevices for application in next-generation nonvolatile memories.
原文 | English |
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文章編號 | 6099626 |
頁(從 - 到) | 412-417 |
頁數 | 6 |
期刊 | IEEE Transactions on Nanotechnology |
卷 | 11 |
發行號 | 2 |
DOIs | |
出版狀態 | Published - 1 3月 2012 |