Nanoscale 2-bit/cell HfO 2 nanocrystal flash memory

Yu Hsien Lin; Chao-Hsin Chien

doi:10.1109/TNANO.2011.2179062

Nanoscale 2-bit/cell HfO ₂ nanocrystal flash memory

Yu Hsien Lin^*, Chao-Hsin Chien

^*此作品的通信作者

研究成果: Article › 同行評審

8 引文斯高帕斯（Scopus）

摘要

In this paper, we demonstrate 50-nm trigate nonvolatile HfO ₂ nanocrystal memory devices on silicon-on-insulator wafers. The proposed technique, which is fully compatible with current CMOS technologies, is used to form highly localized HfO ₂ nanocrystals for application in nonvolatile flash memory. We successfully scale down conventional nonvolatile floating gate memories below the 50-nm node to achieve nanodevices for application in next-generation nonvolatile memories.

原文	English
文章編號	6099626
頁（從 - 到）	412-417
頁數	6
期刊	IEEE Transactions on Nanotechnology
卷	11
發行號	2
DOIs	https://doi.org/10.1109/TNANO.2011.2179062
出版狀態	Published - 1 三月 2012

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10.1109/TNANO.2011.2179062

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Nanoscale 2-bit/cell HfO 2 nanocrystal flash memory

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Nanoscale 2-bit/cell HfO ₂ nanocrystal flash memory