Nanoscale 2-bit/cell HfO 2 nanocrystal flash memory

Yu Hsien Lin*, Chao-Hsin Chien

*此作品的通信作者

    研究成果: Article同行評審

    8 引文 斯高帕斯(Scopus)

    摘要

    In this paper, we demonstrate 50-nm trigate nonvolatile HfO 2 nanocrystal memory devices on silicon-on-insulator wafers. The proposed technique, which is fully compatible with current CMOS technologies, is used to form highly localized HfO 2 nanocrystals for application in nonvolatile flash memory. We successfully scale down conventional nonvolatile floating gate memories below the 50-nm node to achieve nanodevices for application in next-generation nonvolatile memories.

    原文English
    文章編號6099626
    頁(從 - 到)412-417
    頁數6
    期刊IEEE Transactions on Nanotechnology
    11
    發行號2
    DOIs
    出版狀態Published - 1 三月 2012

    指紋

    深入研究「Nanoscale 2-bit/cell HfO <sub>2</sub> nanocrystal flash memory」主題。共同形成了獨特的指紋。

    引用此