Nanomechanical, structural, and transport properties of Bi3Se2Te thin films

Phuoc Huu Le, Shao Pin Chiu, Sheng Rui Jian*, Chih-Wei Luo, Jiunn-Yuan Lin, Juhn-Jong Lin, Kaung-Hsiung Wu, M. Gospodinov

*此作品的通信作者

研究成果: Article同行評審

15 引文 斯高帕斯(Scopus)

摘要

New ternary phase of Bi3Se2Te thin films were successfully grown through pulsed laser deposition with a single Bi2Se2Te crystal as the target. Bi-rich and Se- and Te-deficient compositions deposited at a substrate temperature (Ts) of 250°C and helium gas pressures (PHe) ranging from 2.0 × 10-5 to 6.5 × 10-1 Torr aided the formation of the dominant Bi-rich phase: Bi3Se2Te. The films were grown epitaxially on Al2O3 (001) substrates with Bi3Se2Te [001]//Al2O3 [001] and Bi3Se2Te [110]//Al2O3 [210]. An increase in PHe remarkably enhanced the hardness and Young's modulus of the films, primarily because of the decrease in nanograin size, following the Hall-Petch relationship. Moreover, the Bi3Se2Te films present linear magnetoresistance under a high perpendicular magnetic field (B ≥ 4 T) and two-dimensional weak antilocalization effect under a low B (±1 T) which may be attributed to topological insulator surface state (TSS). Clearly, further theoretical calculations and experiments are needed to confirm the suggested interpretation.

原文English
頁(從 - 到)350-357
頁數8
期刊Journal of Alloys and Compounds
679
DOIs
出版狀態Published - 15 9月 2016

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