Nanofabrication for multi states of Ge2Sb2Te5 by femto-seond laser induced forward transfer

Ming-Lun Tseng*, Bo Han Chen, Cheng Hung Chu, Chia Min Chang, Hai Pang Chiang, Din Ping Tsai

*此作品的通信作者

研究成果: Conference contribution同行評審

摘要

The nano patterns of phase-change material Ge2Sb2Te5 are fabricated by the femto-second laser-induced forward transfer method. The size and the phase state of the Ge2Sb2Te5 patterns can be effectively controlled by varying the applied laser fluence and film thickness. Also, the multilevel electronic states of fabricated patterns are observed through the conductive-atomic force microscopy. This research has great potential in the area of the optical and the electrical data storage.

原文English
主出版物標題Joint International Symposium on Optical Memory and Optical Data Storage, ISOM_ODS 2011
發行者Optical Society of American (OSA)
章節OTuD21
頁數3
ISBN(列印)9781557529152
DOIs
出版狀態Published - 17 7月 2011
事件Joint International Symposium on Optical Memory and Optical Data Storage, ISOM_ODS 2011 - Kauai, HI, United States
持續時間: 17 7月 201120 7月 2011

出版系列

名字Optics InfoBase Conference Papers
ISSN(電子)2162-2701

Conference

ConferenceJoint International Symposium on Optical Memory and Optical Data Storage, ISOM_ODS 2011
國家/地區United States
城市Kauai, HI
期間17/07/1120/07/11

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