Nanocrystallization and interfacial tension of sol-gel derived memory

Chi Chang Wu*, Yi Jen Tsai, Min Ching Chu, Shao Ming Yang, Fu-Hsiang Ko, Pin Lin Liu, Wen Luh Yang, Hsin Chiang You

*此作品的通信作者

研究成果: Article同行評審

6 引文 斯高帕斯(Scopus)

摘要

The formation of the nanocrystals (NCs) by using the sol-gel spin-coating method at various annealing temperatures had been studied. The film started to form the islands at 600 °C annealing, and finally transferred into NCs at 900 °C. A model was proposed to explain the transformation of thin film. The morphology of sol-gel thin film at 600 °C annealing was varied and had higher interfacial energy. The crystallized process at 900 °C annealing could minimize the energy. The retention for 900 °C annealed sample exhibited less than 30% charge loss after 106 s at 125 °C measurement.

原文English
文章編號123111
期刊Applied Physics Letters
92
發行號12
DOIs
出版狀態Published - 3 4月 2008

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