Nanocontact Disorder in Nanoelectronics for Modulation of Light and Gas Sensitivities

Yen Fu Lin*, Chia Hung Chang, Tsu Chang Hung, Wen-Bin Jian*, Kazuhito Tsukagoshi, Yue Han Wu, Li Chang, Zhaoping Liu, Jiye Fang

*此作品的通信作者

研究成果: Article同行評審

7 引文 斯高帕斯(Scopus)

摘要

To fabricate reliable nanoelectronics, whether by top-down or bottom-up processes, it is necessary to study the electrical properties of nanocontacts. The effect of nanocontact disorder on device properties has been discussed but not quantitatively studied. Here, by carefully analyzing the temperature dependence of device electrical characteristics and by inspecting them with a microscope, we investigated the Schottky contact and Mott's variable-range-hopping resistances connected in parallel in the nanocontact. To interpret these parallel resistances, we proposed a model of Ti/TiOx in the interface between the metal electrodes and nanowires. The hopping resistance as well as the nanocontact disorder dominated the total device resistance for high-resistance devices, especially at low temperatures. Furthermore, we introduced nanocontact disorder to modulate the light and gas responsivities of the device; unexpectedly, it multiplied the sensitivities compared with the intrinsic sensitivity of the nanowires. Our results improve the collective understanding of electrical contacts to low-dimensional semiconductor devices and will aid performance optimization in future nanoelectronics.

原文English
文章編號13035
頁(從 - 到)1-12
頁數12
期刊Scientific reports
5
DOIs
出版狀態Published - 11 八月 2015

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