@inproceedings{4fe593f0bc3f4ea68ce2ca712335f7ba,
title = "Nano-scale implantless Schottky-barrier SOI FinFETs with excellent ambipolar performance",
abstract = " A novel nano-scale SOI device featuring silicide Schottky source/drain and field-induced S/D extensions is proposed and demonstrated. Excellent p- and n-channel performance with nearly ideal subthreshold swing (∼ 60 mV/dec.) and high on-/off-state current ratio (>10 9 and >10 8 for n- and p-channel modes, respectively) is realized, for the first time, on a single device. These encouraging results suggest that the new device may represent a potential alternative to post-CMOS device applications. ",
keywords = "Doping, Etching, Fabrication, FinFETs, Fluctuations, Lithography, Nanoscale devices, Oxidation, Silicides, Voltage",
author = "Horng-Chih Lin and Wang, {Meng Fan} and Hou, {Fu Ju} and Liu, {Jan Tsai} and Fu-Hsiang Ko and Chen, {Hsuen Li} and Huang, {Guo Wei} and Huang, {Tiao Yuan} and Sze, {S. M.}",
year = "2002",
month = jan,
day = "1",
doi = "10.1109/DRC.2002.1029498",
language = "English",
series = "Device Research Conference - Conference Digest, DRC",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "45--46",
booktitle = "60th Device Research Conference, DRC 2002",
address = "United States",
note = "60th Device Research Conference, DRC 2002 ; Conference date: 24-06-2002 Through 26-06-2002",
}