We report a novel resistive random access memory using tri-layer dielectrics of GeO x /nano-crystal TiO2/TaON and low cost top Ni and bottom TaN electrodes. Excellent device performance of ultra-low 720 fJ switching energy, tight distributions of set/reset currents, and exceptionally long endurance of 5×109 cycles were achieved simultaneously. Such excellent endurance may create new applications such as those used for Data Centers that are ascribed to the higher-κ nano-crystal TiO2, hopping pass via grain boundaries, and fast switching speed of 100 ns to improve the dielectric fatigue during endurance stress.
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|Applied Physics A: Materials Science and Processing
|Published - 1 4月 2013