N incorporation into InGaAs cap layer in InAs self-assembled quantum dots

Jenn-Fang Chen*, R. S. Hsiao, P. C. Hsieh, Y. J. Chen, Y. P. Chen, J. S. Wang, J. Y. Chi

*此作品的通信作者

研究成果: Article同行評審

3 引文 斯高帕斯(Scopus)

摘要

This study presents the results of incorporating N into self-assembled InAs quantum dots (QDs) capped with an InGaAs cap layer. Experimental results indicate that such incorporation can redshift the QD ground state and decrease the energy spacing between the QD ground and first excited states. However, this incorporation reduces the potential barrier of the cap layer, increasing the electron escape from the QDs. Capacitance-voltage profiling shows that a broad shoulder corresponding to the electron emission from the QD ground to first-excited state cannot be resolved from the peak related to the electron emission from the excited states upon this incorporation. This finding implies that this incorporation reduces the energy spacing between the QD ground and first-excited states in the conduction band, thus correlating well with the photoluminescence data. In contrast, incorporating N directly into the InAs QD produces no redshift of the emission wavelength but introduces a deep trap at ∼0.21 eV that depletes the electrons in the QDs.

原文English
文章編號113525
期刊Journal of Applied Physics
98
發行號11
DOIs
出版狀態Published - 27 十二月 2005

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