N-channel versus P-channel flas EEPROM-which one has better reliabilities

Steve S. Chung, S. T. Liaw, C. M. Yih, Z. H. Ho, C. J. Lin, D. S. Kuo, M. S. Liang

    研究成果: Conference article同行評審

    4 引文 斯高帕斯(Scopus)

    摘要

    In this paper, a comprehensive study of n- and p-channel flash cells in terms of performance and reliability is presented. In particular, the hot-carrier reliability issues such as disturbs, endurance, in both n- and p-channel flash cells are also investigated. The most serious reliability issue in p-channel flash memory, drain disturb, can be overcome by using DINOR structure. These results can be used as a guideline for designers to choose. Although the n-channel flash cell exhibits higher electron mobilities, the p-channel flash cell is most advantageous with features such as high speed, better reliability, and low power. These meet the scaling trend such that it is a promising candidate for future flash memory applications.

    原文English
    頁(從 - 到)67-72
    頁數6
    期刊Annual Proceedings - Reliability Physics (Symposium)
    出版狀態Published - 4月 2001
    事件39th Annual International Reliability Physics Symposium - Orlando, FL, United States
    持續時間: 30 4月 20013 5月 2001

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