Multiphoton-ionization / mass spectrometric detection of gallium atom during the trimethylgallium CVD reaction

D. W. Squire; C. S. Dulcey; Ming-Chang Lin

doi:10.1016/0009-2614(86)80527-9

Multiphoton-ionization / mass spectrometric detection of gallium atom during the trimethylgallium CVD reaction

D. W. Squire, C. S. Dulcey^*, Ming-Chang Lin

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摘要

Gallium atoms were detected by multiphoton-ionization mass spectrometry in the low-pressure decomposition of trimethylgallium (TMG) on heated substrates (300-1100K). On copper surfaces, an activation energy of 34±3 kcal mol^-1 was found for the production of Ga (ground state). This activation energy is attributed to the desorption of gallium from the surface. GaAs substrates produce similar results at lower temperatures (T≤ 870 K).

原文	English
頁（從 - 到）	112-117
頁數	6
期刊	Chemical Physics Letters
卷	131
發行號	1-2
DOIs	https://doi.org/10.1016/0009-2614(86)80527-9
出版狀態	Published - 31 10月 1986

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N2 - Gallium atoms were detected by multiphoton-ionization mass spectrometry in the low-pressure decomposition of trimethylgallium (TMG) on heated substrates (300-1100K). On copper surfaces, an activation energy of 34±3 kcal mol-1 was found for the production of Ga (ground state). This activation energy is attributed to the desorption of gallium from the surface. GaAs substrates produce similar results at lower temperatures (T≤ 870 K).

AB - Gallium atoms were detected by multiphoton-ionization mass spectrometry in the low-pressure decomposition of trimethylgallium (TMG) on heated substrates (300-1100K). On copper surfaces, an activation energy of 34±3 kcal mol-1 was found for the production of Ga (ground state). This activation energy is attributed to the desorption of gallium from the surface. GaAs substrates produce similar results at lower temperatures (T≤ 870 K).

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Multiphoton-ionization / mass spectrometric detection of gallium atom during the trimethylgallium CVD reaction

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