Multilevel resistive switching memory with amorphous InGaZnO-based thin film

Ching Hui Hsu; Yang Shun Fan; Po-Tsun Liu

doi:10.1063/1.4792316

Multilevel resistive switching memory with amorphous InGaZnO-based thin film

Ching Hui Hsu, Yang Shun Fan, Po-Tsun Liu^*

^*此作品的通信作者

光電工程學系

研究成果: Article › 同行評審

60 引文斯高帕斯（Scopus）

摘要

Multi-level storage capability of resistive random access memory (RRAM) using amorphous indium-gallium-zinc-oxide (InGaZnO) thin film is demonstrated by the TiN/Ti/InGaZnO/Pt device structure under different operation modes. The distinct four-level resistance states can be obtained by varying either the trigger voltage pulse or the compliance current. In addition, the RRAM devices exhibit superior characteristics of programming/erasing endurance and data retention for the application of multi-level nonvolatile memory technology. Physical transport mechanisms for the multi-level resistive switching characteristics are also deduced in this study.

原文	English
文章編號	062905
頁（從 - 到）	1-3
頁數	3
期刊	Applied Physics Letters
卷	102
發行號	6
DOIs	https://doi.org/10.1063/1.4792316
出版狀態	Published - 11 2月 2013

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10.1063/1.4792316

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N2 - Multi-level storage capability of resistive random access memory (RRAM) using amorphous indium-gallium-zinc-oxide (InGaZnO) thin film is demonstrated by the TiN/Ti/InGaZnO/Pt device structure under different operation modes. The distinct four-level resistance states can be obtained by varying either the trigger voltage pulse or the compliance current. In addition, the RRAM devices exhibit superior characteristics of programming/erasing endurance and data retention for the application of multi-level nonvolatile memory technology. Physical transport mechanisms for the multi-level resistive switching characteristics are also deduced in this study.

AB - Multi-level storage capability of resistive random access memory (RRAM) using amorphous indium-gallium-zinc-oxide (InGaZnO) thin film is demonstrated by the TiN/Ti/InGaZnO/Pt device structure under different operation modes. The distinct four-level resistance states can be obtained by varying either the trigger voltage pulse or the compliance current. In addition, the RRAM devices exhibit superior characteristics of programming/erasing endurance and data retention for the application of multi-level nonvolatile memory technology. Physical transport mechanisms for the multi-level resistive switching characteristics are also deduced in this study.

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Multilevel resistive switching memory with amorphous InGaZnO-based thin film

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