TY - GEN
T1 - Multilayer bottom antireflective coatings for high numerical aperture and modified illumination exposure systems
AU - Chen, H. L.
AU - Fan, W.
AU - Wang, T. J.
AU - Ko, Fu-Hsiang
AU - Hsieh, C. I.
N1 - Publisher Copyright:
© 2002 IEEE.
PY - 2002
Y1 - 2002
N2 - In the recent ITRS roadmap, ArF and F2 excimer laser lithographies combining with resolution enhancement techniques would lead IC technologies to generations of 90 nm and 65 nm, respectively. For increasing resolution of optical lithography, expose systems with high numerical aperture (NA) are essential. The efficiency of the conventional single-layer BARC structure will degrade as the incident angle increased. It is due to the reflectance at resist/BARC interface increases in the large incident-angle regime. Here we demonstrate a multilayer bottom antireflective coating (BARC) layer for high-NA exposure systems in ArF and F2 lithographies.
AB - In the recent ITRS roadmap, ArF and F2 excimer laser lithographies combining with resolution enhancement techniques would lead IC technologies to generations of 90 nm and 65 nm, respectively. For increasing resolution of optical lithography, expose systems with high numerical aperture (NA) are essential. The efficiency of the conventional single-layer BARC structure will degrade as the incident angle increased. It is due to the reflectance at resist/BARC interface increases in the large incident-angle regime. Here we demonstrate a multilayer bottom antireflective coating (BARC) layer for high-NA exposure systems in ArF and F2 lithographies.
UR - http://www.scopus.com/inward/record.url?scp=84960382456&partnerID=8YFLogxK
U2 - 10.1109/IMNC.2002.1178544
DO - 10.1109/IMNC.2002.1178544
M3 - Conference contribution
AN - SCOPUS:84960382456
T3 - 2002 International Microprocesses and Nanotechnology Conference, MNC 2002
SP - 62
EP - 63
BT - 2002 International Microprocesses and Nanotechnology Conference, MNC 2002
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - International Microprocesses and Nanotechnology Conference, MNC 2002
Y2 - 6 November 2002 through 8 November 2002
ER -