@inproceedings{7d1de6578cf641a4bd5de9199d477c60,
title = "Multilayer bottom antireflective coatings for high numerical aperture and modified illumination exposure systems",
abstract = "In the recent ITRS roadmap, ArF and F2 excimer laser lithographies combining with resolution enhancement techniques would lead IC technologies to generations of 90 nm and 65 nm, respectively. For increasing resolution of optical lithography, expose systems with high numerical aperture (NA) are essential. The efficiency of the conventional single-layer BARC structure will degrade as the incident angle increased. It is due to the reflectance at resist/BARC interface increases in the large incident-angle regime. Here we demonstrate a multilayer bottom antireflective coating (BARC) layer for high-NA exposure systems in ArF and F2 lithographies.",
author = "Chen, {H. L.} and W. Fan and Wang, {T. J.} and Fu-Hsiang Ko and Hsieh, {C. I.}",
note = "Publisher Copyright: {\textcopyright} 2002 IEEE.; International Microprocesses and Nanotechnology Conference, MNC 2002 ; Conference date: 06-11-2002 Through 08-11-2002",
year = "2002",
doi = "10.1109/IMNC.2002.1178544",
language = "English",
series = "2002 International Microprocesses and Nanotechnology Conference, MNC 2002",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "62--63",
booktitle = "2002 International Microprocesses and Nanotechnology Conference, MNC 2002",
address = "United States",
}