Multidirection Piezoelectricity in Mono- and Multilayered Hexagonal α-In2Se3

Fei Xue, Junwei Zhang, Weijin Hu, Wei Ting Hsu, Ali Han, Siu Fung Leung, Jing Kai Huang, Yi Wan, Shuhai Liu, Junli Zhang, Jr Hau He, Wen-Hao Chang, Zhong Lin Wang, Xixiang Zhang*, Lain Jong Li

*此作品的通信作者

研究成果: Article同行評審

100 引文 斯高帕斯(Scopus)

摘要

Piezoelectric materials have been widely used for sensors, actuators, electronics, and energy conversion. Two-dimensional (2D) ultrathin semiconductors, such as monolayer h-BN and MoS2 with their atom-level geometry, are currently emerging as new and attractive members of the piezoelectric family. However, their piezoelectric polarization is commonly limited to the in-plane direction of odd-number ultrathin layers, largely restricting their application in integrated nanoelectromechanical systems. Recently, theoretical calculations have predicted the existence of out-of-plane and in-plane piezoelectricity in monolayer α-In2Se3. Here, we experimentally report the coexistence of out-of-plane and in-plane piezoelectricity in monolayer to bulk α-In2Se3, attributed to their noncentrosymmetry originating from the hexagonal stacking. Specifically, the corresponding d33 piezoelectric coefficient of α-In2Se3 increases from 0.34 pm/V (monolayer) to 5.6 pm/V (bulk) without any odd-even effect. In addition, we also demonstrate a type of α-In2Se3-based flexible piezoelectric nanogenerator as an energy-harvesting cell and electronic skin. The out-of-plane and in-plane piezoelectricity in α-In2Se3 flakes offers an opportunity to enable both directional and nondirectional piezoelectric devices to be applicable for self-powered systems and adaptive and strain-tunable electronics/optoelectronics.

原文English
頁(從 - 到)4976-4983
頁數8
期刊ACS Nano
12
發行號5
DOIs
出版狀態Published - 22 五月 2018

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