Multi-level memory systems using error control codes

Hsie-Chia Chang*, Chien Ching Lin, Tien Yuan Hsiao, Jieh-Tsorng Wu, Ta-Hui Wang


    研究成果: Conference article同行評審

    9 引文 斯高帕斯(Scopus)


    In this paper, the multi-level memory system using error control codes has been proposed. As compared with other approaches for 2m-level memory cells, our proposal features an effective grouping of several q-level memory cells with q > 2m in order to create parity bits of error control codes. Therefore, the proposed methodology can enhance both the yield and reliability without area penalty for multilevel memory systems. The BCH (72,64) code of correcting single error is presented for 5-level memory cells. In contrast to 22-level memory cells, our proposal can improve yields from 61.58% to 99.92% for 16Mbit and make the mass production of 1Gbit memory practicable under the approximated model for StrataFlash™. Since our work was motivated from the use of q-level cells in substitution for 2 m-level cells, not only multi-level flash memory, but also multi-level DRAM systems, can both benefit from our proposed methodology.

    期刊Proceedings - IEEE International Symposium on Circuits and Systems
    出版狀態Published - 7 9月 2004
    事件2004 IEEE International Symposium on Cirquits and Systems - Proceedings - Vancouver, BC, Canada
    持續時間: 23 5月 200426 5月 2004


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