Multi-level control of conductive nano-filament evolution in HfO2 ReRAM by pulse-train operations

L. Zhao; H. Y. Chen; S. C. Wu; Z. Jiang; S. Yu; Tuo-Hung Hou; H. S.Philip Wong; Y. Nishi

doi:10.1039/c4nr00500g

Multi-level control of conductive nano-filament evolution in HfO₂ ReRAM by pulse-train operations

L. Zhao, H. Y. Chen, S. C. Wu, Z. Jiang, S. Yu, Tuo-Hung Hou, H. S.Philip Wong, Y. Nishi^*

^*此作品的通信作者

研究成果: Article › 同行評審

144 引文斯高帕斯（Scopus）

摘要

Precise electrical manipulation of nanoscale defects such as vacancy nano-filaments is highly desired for the multi-level control of ReRAM. In this paper we present a systematic investigation on the pulse-train operation scheme for reliable multi-level control of conductive filament evolution. By applying the pulse-train scheme to a 3 bit per cell HfO ₂ ReRAM, the relative standard deviations of resistance levels are improved up to 80% compared to the single-pulse scheme. The observed exponential relationship between the saturated resistance and the pulse amplitude provides evidence for the gap-formation model of the filament-rupture process.

原文	English
頁（從 - 到）	5698-5702
頁數	5
期刊	Nanoscale
卷	6
發行號	11
DOIs	https://doi.org/10.1039/c4nr00500g
出版狀態	Published - 7 6月 2014

存取文件

10.1039/c4nr00500g

其它文件與鏈接

Link to publication in Scopus

引用此

@article{931e8012e92949dd8d98efa9278dd1a6,

title = "Multi-level control of conductive nano-filament evolution in HfO2 ReRAM by pulse-train operations",

abstract = " Precise electrical manipulation of nanoscale defects such as vacancy nano-filaments is highly desired for the multi-level control of ReRAM. In this paper we present a systematic investigation on the pulse-train operation scheme for reliable multi-level control of conductive filament evolution. By applying the pulse-train scheme to a 3 bit per cell HfO 2 ReRAM, the relative standard deviations of resistance levels are improved up to 80% compared to the single-pulse scheme. The observed exponential relationship between the saturated resistance and the pulse amplitude provides evidence for the gap-formation model of the filament-rupture process.",

author = "L. Zhao and Chen, {H. Y.} and Wu, {S. C.} and Z. Jiang and S. Yu and Tuo-Hung Hou and Wong, {H. S.Philip} and Y. Nishi",

year = "2014",

month = jun,

day = "7",

doi = "10.1039/c4nr00500g",

language = "English",

volume = "6",

pages = "5698--5702",

journal = "Nanoscale",

issn = "2040-3364",

publisher = "Royal Society of Chemistry",

number = "11",

}

TY - JOUR

T1 - Multi-level control of conductive nano-filament evolution in HfO2 ReRAM by pulse-train operations

AU - Zhao, L.

AU - Chen, H. Y.

AU - Wu, S. C.

AU - Jiang, Z.

AU - Yu, S.

AU - Hou, Tuo-Hung

AU - Wong, H. S.Philip

AU - Nishi, Y.

PY - 2014/6/7

Y1 - 2014/6/7

N2 - Precise electrical manipulation of nanoscale defects such as vacancy nano-filaments is highly desired for the multi-level control of ReRAM. In this paper we present a systematic investigation on the pulse-train operation scheme for reliable multi-level control of conductive filament evolution. By applying the pulse-train scheme to a 3 bit per cell HfO 2 ReRAM, the relative standard deviations of resistance levels are improved up to 80% compared to the single-pulse scheme. The observed exponential relationship between the saturated resistance and the pulse amplitude provides evidence for the gap-formation model of the filament-rupture process.

AB - Precise electrical manipulation of nanoscale defects such as vacancy nano-filaments is highly desired for the multi-level control of ReRAM. In this paper we present a systematic investigation on the pulse-train operation scheme for reliable multi-level control of conductive filament evolution. By applying the pulse-train scheme to a 3 bit per cell HfO 2 ReRAM, the relative standard deviations of resistance levels are improved up to 80% compared to the single-pulse scheme. The observed exponential relationship between the saturated resistance and the pulse amplitude provides evidence for the gap-formation model of the filament-rupture process.

UR - http://www.scopus.com/inward/record.url?scp=84901049640&partnerID=8YFLogxK

U2 - 10.1039/c4nr00500g

DO - 10.1039/c4nr00500g

M3 - Article

AN - SCOPUS:84901049640

SN - 2040-3364

VL - 6

SP - 5698

EP - 5702

JO - Nanoscale

JF - Nanoscale

IS - 11

ER -

Multi-level control of conductive nano-filament evolution in HfO2 ReRAM by pulse-train operations

摘要

存取文件

其它文件與鏈接

指紋

引用此

Multi-level control of conductive nano-filament evolution in HfO₂ ReRAM by pulse-train operations