Multi-layered MoS2 film formed by high-temperature sputtering for enhancement-mode nMOSFETs

Takumi Ohashi*, Kohei Suda, Seiya Ishihara, Naomi Sawamoto, Shimpei Yamaguchi, Kentaro Matsuura, Kuniyuki Kakushima, Nobuyuki Sugii, Akira Nishiyama, Yoshinori Kataoka, Kenji Natori, Kazuo Tsutsui, Hiroshi Iwai, Atsushi Ogura, Hitoshi Wakabayashi

*此作品的通信作者

研究成果: Article同行評審

45 引文 斯高帕斯(Scopus)

摘要

A multi-layered MoS2 film was formed on a SiO2 film by high-temperature sputtering, which is one of the alternative methods of Si LSI technology. It was found that the carrier density of a sputter-deposited MoS2 film is 1000 times smaller than that of an exfoliated one. By sputtering, two different orientations, namely a layer lateral to a SiO2/Si substrate and a layer perpendicular to the substrate, were formed. The lateral layer showed a lower carrier density than the perpendicular layer because of the decrease in the number of sulfur vacancies, as commonly discussed in several research studies. However, the vacancies are not sufficient for describing this significant reduction in carrier density. It is considered that a sodium ion functioning as an interface trapped charge is one of the main origins of carriers. Sputtering, which enables us to determine the sodium contamination level, can be seen as appropriate for reducing the carrier density; hence, this method is considered to be efficient in realizing enhancement-mode MoS2 MOSFETs. In addition, sputtering also enable us to form large-scale MoS2 films up to a wafer size. Therefore, a sputterdeposited MoS2 film is a promising material for post-silicon devices.

原文English
文章編號04DN08
期刊Japanese Journal of Applied Physics
54
發行號4
DOIs
出版狀態Published - 1 四月 2015

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