Multi-energy oxygen ion implantation isolation for AlGaN/GaN HEMTs

Jin Yu Shiu*, Yi Shan Shoau, Jui Chien Huang, Yen Chang Hsieh, Chia Ta Chang, Chung Yu Lu, Edward Yi Chang

*此作品的通信作者

研究成果: Paper同行評審

摘要

Multiple-energy oxygen ion implantation was used for AlGaN/GaN high electron mobility transistor (HEMT) isolation. The devices fabricated using this technique had high saturation current of 668mA/mm with maximum current of 833mA/mm, high off-state breakdown voltage of 87V for 4.5μm G-D spacing devices and high peak transconductance of 288mS/mm. Meanwhile, the leakage current was only 250pA for 75μm width pad under 20V reverse bias. The current slump behavior was also suppressed as compared to the AlGaN/GaN HEMTs using ICP mesa dry etch for isolation. XTEM micrographs of the as-implanted and 300□ l hour post-annealed samples were taken and compared with data of the the leakage current. Overall, this study shows that the AlGaN/GaN HEMTs device performance was improved by using multi-energy oxygen ion implantation isolation process as compared with the device formed by conventional dry etch mesa isolation.

原文English
頁面296-300
頁數5
出版狀態Published - 5月 2005
事件207th ECS Meeting - Quebec, Canada
持續時間: 16 5月 200520 5月 2005

Conference

Conference207th ECS Meeting
國家/地區Canada
城市Quebec
期間16/05/0520/05/05

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