Multiple-energy oxygen ion implantation was used for AlGaN/GaN high electron mobility transistor (HEMT) isolation. The devices fabricated using this technique had high saturation current of 668mA/mm with maximum current of 833mA/mm, high off-state breakdown voltage of 87V for 4.5μm G-D spacing devices and high peak transconductance of 288mS/mm. Meanwhile, the leakage current was only 250pA for 75μm width pad under 20V reverse bias. The current slump behavior was also suppressed as compared to the AlGaN/GaN HEMTs using ICP mesa dry etch for isolation. XTEM micrographs of the as-implanted and 300□ l hour post-annealed samples were taken and compared with data of the the leakage current. Overall, this study shows that the AlGaN/GaN HEMTs device performance was improved by using multi-energy oxygen ion implantation isolation process as compared with the device formed by conventional dry etch mesa isolation.
|出版狀態||Published - 5月 2005|
|事件||207th ECS Meeting - Quebec, Canada|
持續時間: 16 5月 2005 → 20 5月 2005
|Conference||207th ECS Meeting|
|期間||16/05/05 → 20/05/05|