Multi-bit-per-Cell a-IGZO TFT resistive-switching memory for system-on-plastic applications

Keyphrases

• Amorphous InGaZnO (a-IGZO) 100%
• Resistive Random Access Memory (ReRAM) 100%
• Multi-bit 100%
• Room Temperature 50%
• Cell Operation 50%
• High Density 50%
• Memory Device 50%
• Resistive Switching 50%
• Storage Characteristics 50%
• Flexible Nonvolatile Memory 50%
• High Bits 50%
• Flexible Memory 50%
• Bit Density 50%
• Low-temperature Fabrication 50%
• Logic Compatible 50%

Material Science

• Density 100%