@inproceedings{e54e451a12414651b9b93e75136e4249,
title = "Multi-bit-per-Cell a-IGZO TFT resistive-switching memory for system-on-plastic applications",
abstract = "We reported a novel flexible nonvolatile memory using complete logic-compatible a-IGZO TFTs fabricated at room temperature. The memory device utilized localized and independent resistive switching for high-density two-bit-per-cell and multi-bit-per-cell operations. Combining low-temperature fabrication, low-cost integration, high bit-density, and excellent flexible memory characteristics, this device shows promise for future system-on-plastic applications.",
author = "Wu, {Shih Chieh} and Feng, {Hsien Tsung} and Yu, {Ming Jiue} and Wang, {I. Ting} and Tuo-Hung Hou",
year = "2012",
month = dec,
day = "10",
doi = "10.1109/IEDM.2012.6478983",
language = "English",
isbn = "9781467348706",
series = "Technical Digest - International Electron Devices Meeting, IEDM",
pages = "5.3.1--5.3.4",
booktitle = "2012 IEEE International Electron Devices Meeting, IEDM 2012",
note = "null ; Conference date: 10-12-2012 Through 13-12-2012",
}