MOSFETs with 9 to 13 a thick gate oxides

Mahesh S. Krishnan; Leland Chang; Tsu Jae King; Jeffrey Bokor; Chen-Ming Hu

doi:10.1109/IEDM.1999.823888

MOSFETs with 9 to 13 a thick gate oxides

Mahesh S. Krishnan^*, Leland Chang, Tsu Jae King, Jeffrey Bokor, Chen-Ming Hu

^*此作品的通信作者

國際半導體產業學院

研究成果: Conference article › 同行評審

37 引文斯高帕斯（Scopus）

摘要

In this work, MOSFETs with gate oxides between 9 to 13 A have been fabricated and its behavior analyzed. An improved methodology of extracting gate oxide thickness from the MOSFET gate currents in the accumulation regime is proposed. Experimental evidence for mobility reduction mechanism, namely Remote Charge Scattering has been presented. The mobility was found to be degraded because of scattering by ionized impurities in the poly-gate.

原文	English
頁（從 - 到）	241-244
頁數	4
期刊	Technical Digest - International Electron Devices Meeting
DOIs	https://doi.org/10.1109/IEDM.1999.823888
出版狀態	Published - 1 12月 1999
事件	1999 IEEE International Devices Meeting (IEDM) - Washington, DC, USA 持續時間: 5 12月 1999 → 8 12月 1999

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10.1109/IEDM.1999.823888

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title = "MOSFETs with 9 to 13 a thick gate oxides",

abstract = "In this work, MOSFETs with gate oxides between 9 to 13 A have been fabricated and its behavior analyzed. An improved methodology of extracting gate oxide thickness from the MOSFET gate currents in the accumulation regime is proposed. Experimental evidence for mobility reduction mechanism, namely Remote Charge Scattering has been presented. The mobility was found to be degraded because of scattering by ionized impurities in the poly-gate.",

author = "Krishnan, {Mahesh S.} and Leland Chang and King, {Tsu Jae} and Jeffrey Bokor and Chen-Ming Hu",

year = "1999",

month = dec,

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doi = "10.1109/IEDM.1999.823888",

language = "English",

pages = "241--244",

journal = "Technical Digest - International Electron Devices Meeting",

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note = "1999 IEEE International Devices Meeting (IEDM) ; Conference date: 05-12-1999 Through 08-12-1999",

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T1 - MOSFETs with 9 to 13 a thick gate oxides

AU - Krishnan, Mahesh S.

AU - Chang, Leland

AU - King, Tsu Jae

AU - Bokor, Jeffrey

AU - Hu, Chen-Ming

PY - 1999/12/1

Y1 - 1999/12/1

N2 - In this work, MOSFETs with gate oxides between 9 to 13 A have been fabricated and its behavior analyzed. An improved methodology of extracting gate oxide thickness from the MOSFET gate currents in the accumulation regime is proposed. Experimental evidence for mobility reduction mechanism, namely Remote Charge Scattering has been presented. The mobility was found to be degraded because of scattering by ionized impurities in the poly-gate.

AB - In this work, MOSFETs with gate oxides between 9 to 13 A have been fabricated and its behavior analyzed. An improved methodology of extracting gate oxide thickness from the MOSFET gate currents in the accumulation regime is proposed. Experimental evidence for mobility reduction mechanism, namely Remote Charge Scattering has been presented. The mobility was found to be degraded because of scattering by ionized impurities in the poly-gate.

UR - http://www.scopus.com/inward/record.url?scp=0033345509&partnerID=8YFLogxK

U2 - 10.1109/IEDM.1999.823888

DO - 10.1109/IEDM.1999.823888

M3 - Conference article

AN - SCOPUS:0033345509

SN - 0163-1918

SP - 241

EP - 244

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

T2 - 1999 IEEE International Devices Meeting (IEDM)

Y2 - 5 December 1999 through 8 December 1999

ER -

MOSFETs with 9 to 13 a thick gate oxides

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