@inproceedings{decf8834f97e4dce9b018217ffa950ea,
title = "MOS-bounded diodes for on-chip ESD protection in a 0.15-μm shallow-trench-isolation salicided CMOS process",
abstract = "Novel diode structures without the shallow trench isolation (STI) across the p/n junction for ESD protection in a 0.15-um CMOS process are proposed. A NMOS (PMOS) is especially inserted into the diode structure to form the NMOS-bounded (PMOS-bounded) diode, which is used to block the STI isolation across the p/n junction in the diode structure. Without the STI boundary across the p/n junction of diode structure, the proposed PMOS-bounded and NMOS-bounded diodes can provide more effective protection to the internal circuits, as compared to the other diode structures under reversebiased condition. Such PMOS-bounded and NMOS-bounded dodes are fully process-compatible to general CMOS processes without additional process modification or mask layers.",
author = "Ming-Dou Ker and Lin, {Kun Hsien} and Chuang, {Che Hao}",
year = "2003",
month = jan,
day = "1",
doi = "10.1109/VTSA.2003.1252558",
language = "English",
series = "International Symposium on VLSI Technology, Systems, and Applications, Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "84--87",
booktitle = "VLSI 2003 - 2003 20th International Symposium on VLSI Technology, Systems and Applications, Proceedings",
address = "United States",
note = "20th International Symposium on VLSI Technology, Systems and Applications, VLSI 2003 ; Conference date: 06-10-2003 Through 08-10-2003",
}