Morphologies and plane indices of pyramid patterns on wet-etched patterned sapphire substrate

Yu Chung Chen, Bo Wen Lin, Wen Ching Hsu, Yew-Chuhg Wu*

*此作品的通信作者

研究成果: Article同行評審

17 引文 斯高帕斯(Scopus)

摘要

A wet etching process was employed to investigate the evolution of pyramids on the patterned sapphire substrate (PSS). It has been found that the PSS comprised a hexagonal pyramid covered with six facets {34̄17} when disk-shaped SiO 2 mask still remained. Three facets {11̄05} were exposed when mask was etched away. In this study, a continuous etching process was performed. It was found that another six facets {45̄130} and another three facets {11̄010} appeared on the bottom and the top of pyramid. Finally, when the etching time reached around 5 min, most of pyramids on the PSS disappeared.

原文English
頁(從 - 到)72-75
頁數4
期刊Materials Letters
118
DOIs
出版狀態Published - 1 3月 2014

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