摘要
A wet etching process was employed to investigate the evolution of pyramids on the patterned sapphire substrate (PSS). It has been found that the PSS comprised a hexagonal pyramid covered with six facets {34̄17} when disk-shaped SiO2 mask still remained. Three facets {11̄05} were exposed when mask was etched away. In this study, a continuous etching process was performed. It was found that another six facets {45̄130} and another three facets {11̄010} appeared on the bottom and the top of pyramid. Finally, when the etching time reached around 5 min, most of pyramids on the PSS disappeared.
原文 | English |
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頁(從 - 到) | 72-75 |
頁數 | 4 |
期刊 | Materials Letters |
卷 | 118 |
DOIs | |
出版狀態 | Published - 1 3月 2014 |