Monotonous alloying-driven band edge emission in two-dimensional hexagonal GaSe1−xTex semiconductors for visible to near-infrared photodetection

Nhu Quynh Diep, Yu Xun Chen, Duc Loc Nguyen, My Ngoc Duong, Ssu Kuan Wu, Cheng Wei Liu, Hua Chiang Wen, Wu Ching Chou*, Jenh-Yih Juang, Yao Jane Hsu, Van Qui Le, Ying Hao Chu, Sa Hoang Huynh

*此作品的通信作者

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

This work reports molecular beam epitaxy (MBE) of two-dimensional (2D) GaSe1−xTex ternary alloys that have recently attracted a lot of interest in physics for prospective electronics and optoelectronics even though they face crucial challenges in their epitaxial technology. Disregarding a distinction in crystal phase symmetry of two end-terminals, i.e., hexagonal-GaSe (h-GaSe) and monoclinic-GaTe (m-GaTe), the majority of hexagonal-GaSe1−xTex (h-GaSe1−xTex) phase on a GaN/sapphire platform is guaranteed under our specific growth conditions without a visible sign of phase transition. We have also proposed extracting the Te composition of the ternary alloy via the experimental in-plane lattice constant, which is consistent with those indicated from energy dispersion X-ray data. Fascinatingly, the experimental and predictable band emission versus Te content displays a continuous redshift from 1.78 eV (h-GaSe) to 1.25 eV (h-GaSe0.4Te0.6) then a reversible blueshift to 1.46 eV (h-GaTe). Importantly, benefiting from the presence of Te incorporated atoms, the photoresponse performance of the hexagonal ternary alloy has greatly enhanced in comparison to the h-GaSe binary in terms of photocurrent density (up to 1250 nA cm−2 for h-GaSe0.65Te0.35 at only 300 mV bias). Overall, the results pave a way for phase/physical engineering of the alloys through the MBE process and realizing self-powered wafer-scale photodetectors based on 2D Ga-based monochalcogenide epitaxial thin films.

原文English
頁(從 - 到)1772-1781
頁數10
期刊Journal of Materials Chemistry C
11
發行號5
DOIs
出版狀態Published - 12 12月 2022

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