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Monolithically Integrated Polysilicon/Oxide-Semiconductor Hybrid Thin-Film Transistors for Advanced Sensing
Ping Che Liu
,
Chun Jung Su
,
Pei Wen Li
,
Horng Chih Lin
*
*
此作品的通信作者
電子物理學系
電子研究所
研究成果
:
Article
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同行評審
2
引文 斯高帕斯（Scopus）
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Keyphrases
Polysilicon
100%
Amorphous InGaZnO (a-IGZO)
100%
Thin-film Transistors
100%
Oxide Semiconductor
100%
Monolithically Integrated
100%
Advanced Sensing
100%
Hybrid Thin Films
100%
Semiconductor Hybrids
100%
Poly-Si
83%
Zinc Oxide Thin Films
33%
Oxide Thin-film Transistors
33%
Oxide TFT
33%
Polycrystalline Silicon Thin-film Transistors (poly-Si TFTs)
16%
Fabrication Methods
16%
Masking Scheme
16%
Oxide Structure
16%
Contact Resistivity
16%
Monolithic Integration
16%
Sharp Transition
16%
Ti Layer
16%
Transfer Curves
16%
NO2 Gas
16%
Oxide Semiconductor Thin Film Transistor
16%
Process Platform
16%
Material Science
Thin-Film Transistor
100%
Gallium
100%
Zinc Oxide
100%
Indium
100%
Oxide Semiconductor
100%
Electrical Resistivity
16%
Electronic Circuit
16%
Nitrogen Dioxide
16%
Chemical Engineering
Polysilicon
100%
Oxide Semiconductors
100%
Indium
85%
Zinc Oxide
85%
Film
71%
Engineering
Thin-Film Transistor
100%
Oxide Semiconductor
100%
Polysilicon
100%
Fabrication Approach
14%
Monolithic Integration
14%