Monolithically integrated 650 nm and 780 nm semiconductor lasers with aluminum-free active areas

Tien-Chang Lu; S. C. Wang; R. Fu; H. M. Shieh; K. J. Huang

doi:10.1109/CLEO.2001.948071

Monolithically integrated 650 nm and 780 nm semiconductor lasers with aluminum-free active areas

Tien-Chang Lu^*, S. C. Wang, R. Fu, H. M. Shieh, K. J. Huang

^*此作品的通信作者

光電工程學系

研究成果: Paper › 同行評審

摘要

Two substantially different laser materials with aluminum-free active-areas were used for the realization of monolithic integration of two wavelength laser diodes in a single chip. The continuous wave (CW) at room temperature was used to characterize the monolithically integrated laser chips. The laser output power versus current characteristics and the emission spectrum for the 650 nm and 780nm lasers were shown. The threshold current and the differential quantum efficiency of both the lasers were measured.

原文	English
頁面	482-483
頁數	2
DOIs	https://doi.org/10.1109/CLEO.2001.948071
出版狀態	Published - 2001
事件	Conference on Lasers and Electro-Optics (CLEO) - Baltimore, MD, 美國持續時間: 6 5月 2001 → 11 5月 2001

Conference

Conference	Conference on Lasers and Electro-Optics (CLEO)
國家/地區	美國
城市	Baltimore, MD
期間	6/05/01 → 11/05/01

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10.1109/CLEO.2001.948071

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引用此

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title = "Monolithically integrated 650 nm and 780 nm semiconductor lasers with aluminum-free active areas",

abstract = "Two substantially different laser materials with aluminum-free active-areas were used for the realization of monolithic integration of two wavelength laser diodes in a single chip. The continuous wave (CW) at room temperature was used to characterize the monolithically integrated laser chips. The laser output power versus current characteristics and the emission spectrum for the 650 nm and 780nm lasers were shown. The threshold current and the differential quantum efficiency of both the lasers were measured.",

author = "Tien-Chang Lu and Wang, {S. C.} and R. Fu and Shieh, {H. M.} and Huang, {K. J.}",

year = "2001",

doi = "10.1109/CLEO.2001.948071",

language = "English",

pages = "482--483",

note = "Conference on Lasers and Electro-Optics (CLEO) ; Conference date: 06-05-2001 Through 11-05-2001",

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T1 - Monolithically integrated 650 nm and 780 nm semiconductor lasers with aluminum-free active areas

AU - Lu, Tien-Chang

AU - Wang, S. C.

AU - Fu, R.

AU - Shieh, H. M.

AU - Huang, K. J.

PY - 2001

Y1 - 2001

N2 - Two substantially different laser materials with aluminum-free active-areas were used for the realization of monolithic integration of two wavelength laser diodes in a single chip. The continuous wave (CW) at room temperature was used to characterize the monolithically integrated laser chips. The laser output power versus current characteristics and the emission spectrum for the 650 nm and 780nm lasers were shown. The threshold current and the differential quantum efficiency of both the lasers were measured.

AB - Two substantially different laser materials with aluminum-free active-areas were used for the realization of monolithic integration of two wavelength laser diodes in a single chip. The continuous wave (CW) at room temperature was used to characterize the monolithically integrated laser chips. The laser output power versus current characteristics and the emission spectrum for the 650 nm and 780nm lasers were shown. The threshold current and the differential quantum efficiency of both the lasers were measured.

UR - http://www.scopus.com/inward/record.url?scp=0034800981&partnerID=8YFLogxK

U2 - 10.1109/CLEO.2001.948071

DO - 10.1109/CLEO.2001.948071

M3 - Paper

AN - SCOPUS:0034800981

SP - 482

EP - 483

T2 - Conference on Lasers and Electro-Optics (CLEO)

Y2 - 6 May 2001 through 11 May 2001

ER -

Monolithically integrated 650 nm and 780 nm semiconductor lasers with aluminum-free active areas

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Conference

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