Monolithic wideband linear power amplifier with 45% power bandwidth using pseudomorphic high-electron-mobility transistors for long-term evolution application

Che Yang Chiang; Heng-Tung Hsu; Edward Yi Chang

doi:10.7567/JJAP.53.110311

Monolithic wideband linear power amplifier with 45% power bandwidth using pseudomorphic high-electron-mobility transistors for long-term evolution application

Che Yang Chiang^*, Heng-Tung Hsu, Edward Yi Chang

^*此作品的通信作者

研究成果: Article › 同行評審

6 引文斯高帕斯（Scopus）

摘要

A fully integrated, monolithic, wideband linear power amplifier using pseudomorphic high-electron-mobility transistor (pHEMT) technology has been developed for long-term evolution (LTE) applications. Implemented through the stacked field-effect transistor (stacked-FET) configuration, the amplifier exhibited a small signal gain of 15 dB and an output power of 25 dBm at 1 dB compression (P₁dB) with a power-added efficiency (PAE) of 36% from 1.7 to 2.7 GHz yielding 45% power bandwidth. Moreover, when tested under a 10 MHz LTE-modulated signal, the amplifier achieved a 3% error-vector-magnitude (EVM) at 23 dBm output power over the entire power bandwidth.

原文	English
文章編號	110311
期刊	Japanese journal of applied physics
卷	53
發行號	11
DOIs	https://doi.org/10.7567/JJAP.53.110311
出版狀態	Published - 1 11月 2014

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title = "Monolithic wideband linear power amplifier with 45% power bandwidth using pseudomorphic high-electron-mobility transistors for long-term evolution application",

abstract = "A fully integrated, monolithic, wideband linear power amplifier using pseudomorphic high-electron-mobility transistor (pHEMT) technology has been developed for long-term evolution (LTE) applications. Implemented through the stacked field-effect transistor (stacked-FET) configuration, the amplifier exhibited a small signal gain of 15 dB and an output power of 25 dBm at 1 dB compression (P1dB) with a power-added efficiency (PAE) of 36% from 1.7 to 2.7 GHz yielding 45% power bandwidth. Moreover, when tested under a 10 MHz LTE-modulated signal, the amplifier achieved a 3% error-vector-magnitude (EVM) at 23 dBm output power over the entire power bandwidth.",

author = "Chiang, {Che Yang} and Heng-Tung Hsu and Chang, {Edward Yi}",

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Monolithic wideband linear power amplifier with 45% power bandwidth using pseudomorphic high-electron-mobility transistors for long-term evolution application

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