摘要
A fully integrated, monolithic, wideband linear power amplifier using pseudomorphic high-electron-mobility transistor (pHEMT) technology has been developed for long-term evolution (LTE) applications. Implemented through the stacked field-effect transistor (stacked-FET) configuration, the amplifier exhibited a small signal gain of 15 dB and an output power of 25 dBm at 1 dB compression (P1dB) with a power-added efficiency (PAE) of 36% from 1.7 to 2.7 GHz yielding 45% power bandwidth. Moreover, when tested under a 10 MHz LTE-modulated signal, the amplifier achieved a 3% error-vector-magnitude (EVM) at 23 dBm output power over the entire power bandwidth.
原文 | English |
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文章編號 | 110311 |
期刊 | Japanese journal of applied physics |
卷 | 53 |
發行號 | 11 |
DOIs | |
出版狀態 | Published - 1 11月 2014 |