Monolithic V-band pseudomorphic-MODFET low-noise amplifiers

G. Metze*, A. Cornfeld, J. Singer, H. Carlson, Edward Yi Chang, T. Kirkendall, G. Dahrooge, J. Bass, H. L. Hung, T. Lee

*此作品的通信作者

研究成果: Conference article同行評審

7 引文 斯高帕斯(Scopus)

摘要

V-band, low noise MMICs (monolithic microwave integrated circuits) based on pseudomorphic modulation doped FETs (P-MODFETs) have been developed, and have yielded noise figures that are believed to be the lowest reported for any millimeter-wave MMIC. Single-stage low noise amplifiers with P-MODFETs as active elements (gate dimensions 0.35 × 60 μm) exhibited minimum noise figures of 3.9 dB at 58 GHz, with an associated gain of 3.5 dB. Dual-stage MMICs had minimum noise figures of 5.3 dB at 58 GHz, with an associated gain of 8.2 dB, and maximum gain of 10.4 dB at 59.5 GHz. Further, a cascaded four-stage amplifier (two dual-stage MMIC modules) exhibited a 5.8-dB minimum noise figure at 58 GHz, with an associated gain of 18.3 dB, and 21.1 dB of maximum gain. Device processing uniformity and DC and RF reliability data are also presented.

原文English
頁(從 - 到)199-204
頁數6
期刊IEEE MTT-S International Microwave Symposium Digest
1
DOIs
出版狀態Published - 1 12月 1989
事件IEEE MTT-S International Microwave Symposium Digest 1989 - Long Beach, CA, USA
持續時間: 13 6月 198915 6月 1989

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