Monolithic V-band pseudomorphic-MODFET low-noise amplifier

G. Metze; A. Cornfeld; J. Singer; H. Carlson; Edward Yi Chang; T. Kirkendall; G. Dahrooge; J. Bass; H. L. Hung; T. Lee

doi:10.1109/MCS.1989.37275

Monolithic V-band pseudomorphic-MODFET low-noise amplifier

G. Metze^*, A. Cornfeld, J. Singer, H. Carlson, Edward Yi Chang, T. Kirkendall, G. Dahrooge, J. Bass, H. L. Hung, T. Lee

^*此作品的通信作者

材料科學與工程學系

研究成果: Paper › 同行評審

4 引文斯高帕斯（Scopus）

摘要

V-band low-noise MMICs based on pseudomorphic modulation-doped FETs (P-MODFETs) are designed, fabricated, and tested. It is seen that single-stage low-noise amplifiers with P-MODFETs as active elements (gate dimensions 0.35 μm × 60 μm) exhibit minimum noise figures of 3.9 dB at 58 GHz, with an associated gain of 3.5 dB. Dual-stage MMICs have minimum noise figures of 5.3 dB at 58 GHz, with an associated gain of 8.2 dB and maximum gain of 10.4 dB at 59.5 GHz. A cascaded four-stage amplifier (two dual-stage MMIC modules) exhibits a 5.8-dB minimum noise figure at 58 GHz, with an associated gain of 18.3 dB, and 21.1 dB of maximum gain. Device processing uniformity data as well as DC and RF reliability data are presented.

原文	English
頁面	111-116
頁數	6
DOIs	https://doi.org/10.1109/MCS.1989.37275
出版狀態	Published - 1 6月 1989
事件	IEEE 1989 Microwave and Millimeter-Wave Monolithic Circuits Symposium - Digest of Papers - Long Beach, CA, USA 持續時間: 12 6月 1989 → 13 6月 1989

Conference

Conference	IEEE 1989 Microwave and Millimeter-Wave Monolithic Circuits Symposium - Digest of Papers
城市	Long Beach, CA, USA
期間	12/06/89 → 13/06/89

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10.1109/MCS.1989.37275

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@conference{6c78fac4852b499582b7b18cdaeb966f,

title = "Monolithic V-band pseudomorphic-MODFET low-noise amplifier",

abstract = "V-band low-noise MMICs based on pseudomorphic modulation-doped FETs (P-MODFETs) are designed, fabricated, and tested. It is seen that single-stage low-noise amplifiers with P-MODFETs as active elements (gate dimensions 0.35 μm × 60 μm) exhibit minimum noise figures of 3.9 dB at 58 GHz, with an associated gain of 3.5 dB. Dual-stage MMICs have minimum noise figures of 5.3 dB at 58 GHz, with an associated gain of 8.2 dB and maximum gain of 10.4 dB at 59.5 GHz. A cascaded four-stage amplifier (two dual-stage MMIC modules) exhibits a 5.8-dB minimum noise figure at 58 GHz, with an associated gain of 18.3 dB, and 21.1 dB of maximum gain. Device processing uniformity data as well as DC and RF reliability data are presented.",

author = "G. Metze and A. Cornfeld and J. Singer and H. Carlson and Chang, {Edward Yi} and T. Kirkendall and G. Dahrooge and J. Bass and Hung, {H. L.} and T. Lee",

year = "1989",

month = jun,

day = "1",

doi = "10.1109/MCS.1989.37275",

language = "English",

pages = "111--116",

note = "null ; Conference date: 12-06-1989 Through 13-06-1989",

}

Metze, G, Cornfeld, A, Singer, J, Carlson, H, Chang, EY, Kirkendall, T, Dahrooge, G, Bass, J, Hung, HL & Lee, T 1989, 'Monolithic V-band pseudomorphic-MODFET low-noise amplifier', 論文發表於 IEEE 1989 Microwave and Millimeter-Wave Monolithic Circuits Symposium - Digest of Papers, Long Beach, CA, USA, 12/06/89 - 13/06/89 頁 111-116. https://doi.org/10.1109/MCS.1989.37275

TY - CONF

T1 - Monolithic V-band pseudomorphic-MODFET low-noise amplifier

AU - Metze, G.

AU - Cornfeld, A.

AU - Singer, J.

AU - Carlson, H.

AU - Chang, Edward Yi

AU - Kirkendall, T.

AU - Dahrooge, G.

AU - Bass, J.

AU - Hung, H. L.

AU - Lee, T.

PY - 1989/6/1

Y1 - 1989/6/1

N2 - V-band low-noise MMICs based on pseudomorphic modulation-doped FETs (P-MODFETs) are designed, fabricated, and tested. It is seen that single-stage low-noise amplifiers with P-MODFETs as active elements (gate dimensions 0.35 μm × 60 μm) exhibit minimum noise figures of 3.9 dB at 58 GHz, with an associated gain of 3.5 dB. Dual-stage MMICs have minimum noise figures of 5.3 dB at 58 GHz, with an associated gain of 8.2 dB and maximum gain of 10.4 dB at 59.5 GHz. A cascaded four-stage amplifier (two dual-stage MMIC modules) exhibits a 5.8-dB minimum noise figure at 58 GHz, with an associated gain of 18.3 dB, and 21.1 dB of maximum gain. Device processing uniformity data as well as DC and RF reliability data are presented.

AB - V-band low-noise MMICs based on pseudomorphic modulation-doped FETs (P-MODFETs) are designed, fabricated, and tested. It is seen that single-stage low-noise amplifiers with P-MODFETs as active elements (gate dimensions 0.35 μm × 60 μm) exhibit minimum noise figures of 3.9 dB at 58 GHz, with an associated gain of 3.5 dB. Dual-stage MMICs have minimum noise figures of 5.3 dB at 58 GHz, with an associated gain of 8.2 dB and maximum gain of 10.4 dB at 59.5 GHz. A cascaded four-stage amplifier (two dual-stage MMIC modules) exhibits a 5.8-dB minimum noise figure at 58 GHz, with an associated gain of 18.3 dB, and 21.1 dB of maximum gain. Device processing uniformity data as well as DC and RF reliability data are presented.

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U2 - 10.1109/MCS.1989.37275

DO - 10.1109/MCS.1989.37275

M3 - Paper

AN - SCOPUS:0024681301

SP - 111

EP - 116

Y2 - 12 June 1989 through 13 June 1989

ER -

Monolithic V-band pseudomorphic-MODFET low-noise amplifier

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