Monolithic GaN-Based Gate Driver With On-Chip Adaptive On-Time Controller and Negative Current Slope Detector to Prevent Shoot-Through

Shu Yung Lin, Ssu Yu Lin, Sheng Hsi Hung, Tz Wun Wang, Ching Ho Li, Chang Lin Go, Shao Chang Huang, Ke Horng Chen*, Kuo Lin Zheng, Ying Hsi Lin, Shian Ru Lin, Tsung Yen Tsai

*此作品的通信作者

研究成果: Article同行評審

6 引文 斯高帕斯(Scopus)

摘要

This letter proposes a monolithic gallium nitride (GaN) primary-side controller for a flyback converter, consisting mainly of a negative current slope (NCS) detector to suppress shoot-through problems caused by GaN process defects. Moreover, the proposed adaptive on-time (AOT) controller can adapt to changes in the input voltage and limit the maximum allowable switching frequency to achieve high efficiency. Furthermore, the diode turn-on voltage compensated gate driver also enhances the ability to drive the on-chip 650-V power GaN switch. Therefore, the proposed fully integrated GaN-based chip can improve the efficiency by 2% as the deadtime is reduced from 40 to 7 ns. The proposed gate driver has a peak efficiency of 96.2% and a maximum current of 6 A.

原文English
期刊IEEE Solid-State Circuits Letters
6
DOIs
出版狀態Published - 2023

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