Monolayer MoS2 Enabled Single-Crystalline Growth of AlN on Si(100) Using Low-Temperature Helicon Sputtering

Wei Fan Hsu, Li Syuan Lu, Po Chun Kuo, Jie He Chen, Wei Chen Chueh, Han Yeh, Hui Ling Kao*, Jyh Shin Chen, Wen Hao Chang

*此作品的通信作者

研究成果: Article同行評審

7 引文 斯高帕斯(Scopus)

摘要

Growing a single-crystalline film on a substrate relies on the compatibility of crystal symmetry and lattice constant between the two materials. Such limitations can be circumvented by introducing van der Waals epitaxy of three-dimensional (3D) crystals on two-dimensional (2D) layered materials. Recently, buffer-assisted growth of III-nitride films on graphene has been demonstrated. However, the low chemical reactivity of graphene surface considerably limits the large-area and single-crystalline growth of planar 3D films on 2D layered materials. Here, we demonstrate that using highly oriented monolayer MoS2 as a buffer layer, single-crystalline AlN thin films can be grown on Si(100) substrates, which possess a different crystal symmetry with the films. The AlN films were grown by helicon sputtering system at low temperature (400 °C), showing a very flat surface with a root-mean-square roughness of 1.0 nm and an X-ray rocking curve with a full width at half-maximum of 0.336°, indicating a high-crystalline quality. Because the buffer layer as well as the AlN films were prepared at low temperatures, our results not only pave the way for integrating III-nitride with the Si wafer industry process but also open a new possibility for growing III-nitride thin film on various foreign substrates.

原文English
頁(從 - 到)1964-1969
頁數6
期刊ACS Applied Nano Materials
2
發行號4
DOIs
出版狀態Published - 26 四月 2019

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