MOMBE GaAs and AlGaAs for microelectronic devices

S. D. Hersee*, L. Yang, M. Kao, P. Martin, J. Mazurowski, Albert Chin, J. Ballingall

*此作品的通信作者

研究成果: Article同行評審

5 引文 斯高帕斯(Scopus)

摘要

This paper reviews the state of the art of GaAs and AlGaAs materials and microelectronic devices grown by MOMBE (metalorganic molecular beam epitaxy) and related techniques. FET, HEMT and HBT devices have been grown using MOMBE and in the case of FETs and HBTs excellent device and MMIC power performance has been obtained. For example, MOMBE HBTs show current gains in excess of 100 and MMIC power HBT circuits are delivering 2 W of power at 8.5 GHz. We will examine device behavior and relate this to properties of the GaAs and AlGaAs materials.

原文English
頁(從 - 到)218-227
頁數10
期刊Journal of Crystal Growth
120
發行號1-4
DOIs
出版狀態Published - 2 5月 1992

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