Molybdenum metal gate MOS technology for post-SiO 2 gate dielectrics

Q. Lu; R. Lin; P. Ranade; Y. C. Yeo; X. Meng; H. Takeuchi; T. J. King; Chen-Ming Hu; H. Luan; S. Lee; W. Bai; C. H. Lee; D. L. Kwong; X. Guo; X. Wang; T. P. Ma

doi:10.1109/IEDM.2000.904401

Molybdenum metal gate MOS technology for post-SiO ₂ gate dielectrics

Q. Lu^*, R. Lin, P. Ranade, Y. C. Yeo, X. Meng, H. Takeuchi, T. J. King, Chen-Ming Hu, H. Luan, S. Lee, W. Bai, C. H. Lee, D. L. Kwong, X. Guo, X. Wang, T. P. Ma

^*此作品的通信作者

國際半導體產業學院

研究成果: Conference article › 同行評審

31 引文斯高帕斯（Scopus）

摘要

Mo metal gate p-MOSFETs with several advanced gate dielectrics were fabricated. A suitable p-MOSFET work function was achieved and good device characteristics were obtained in all cases. Thermodynamic stability of Mo on Si ₃ N ₄ , ZrO ₂ and ZrSiO ₄ was verified by good carrier mobility agreement with the universal mobility model.

原文	English
頁（從 - 到）	641-644
頁數	4
期刊	Technical Digest - International Electron Devices Meeting
DOIs	https://doi.org/10.1109/IEDM.2000.904401
出版狀態	Published - 1 12月 2000
事件	2000 IEEE International Electron Devices Meeting - San Francisco, CA, 美國持續時間: 10 12月 2000 → 13 12月 2000

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10.1109/IEDM.2000.904401

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@article{4df22d4a51ed4ddd8ff941cbba1819e3,

title = "Molybdenum metal gate MOS technology for post-SiO 2 gate dielectrics",

abstract = " Mo metal gate p-MOSFETs with several advanced gate dielectrics were fabricated. A suitable p-MOSFET work function was achieved and good device characteristics were obtained in all cases. Thermodynamic stability of Mo on Si 3 N 4 , ZrO 2 and ZrSiO 4 was verified by good carrier mobility agreement with the universal mobility model. ",

author = "Q. Lu and R. Lin and P. Ranade and Yeo, {Y. C.} and X. Meng and H. Takeuchi and King, {T. J.} and Chen-Ming Hu and H. Luan and S. Lee and W. Bai and Lee, {C. H.} and Kwong, {D. L.} and X. Guo and X. Wang and Ma, {T. P.}",

year = "2000",

month = dec,

day = "1",

doi = "10.1109/IEDM.2000.904401",

language = "English",

pages = "641--644",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2000 IEEE International Electron Devices Meeting ; Conference date: 10-12-2000 Through 13-12-2000",

}

TY - JOUR

T1 - Molybdenum metal gate MOS technology for post-SiO 2 gate dielectrics

AU - Lu, Q.

AU - Lin, R.

AU - Ranade, P.

AU - Yeo, Y. C.

AU - Meng, X.

AU - Takeuchi, H.

AU - King, T. J.

AU - Hu, Chen-Ming

AU - Luan, H.

AU - Lee, S.

AU - Bai, W.

AU - Lee, C. H.

AU - Kwong, D. L.

AU - Guo, X.

AU - Wang, X.

AU - Ma, T. P.

PY - 2000/12/1

Y1 - 2000/12/1

N2 - Mo metal gate p-MOSFETs with several advanced gate dielectrics were fabricated. A suitable p-MOSFET work function was achieved and good device characteristics were obtained in all cases. Thermodynamic stability of Mo on Si 3 N 4 , ZrO 2 and ZrSiO 4 was verified by good carrier mobility agreement with the universal mobility model.

AB - Mo metal gate p-MOSFETs with several advanced gate dielectrics were fabricated. A suitable p-MOSFET work function was achieved and good device characteristics were obtained in all cases. Thermodynamic stability of Mo on Si 3 N 4 , ZrO 2 and ZrSiO 4 was verified by good carrier mobility agreement with the universal mobility model.

UR - http://www.scopus.com/inward/record.url?scp=0034453382&partnerID=8YFLogxK

U2 - 10.1109/IEDM.2000.904401

DO - 10.1109/IEDM.2000.904401

M3 - Conference article

AN - SCOPUS:0034453382

SN - 0163-1918

SP - 641

EP - 644

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

T2 - 2000 IEEE International Electron Devices Meeting

Y2 - 10 December 2000 through 13 December 2000

ER -

Molybdenum metal gate MOS technology for post-SiO 2 gate dielectrics

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Molybdenum metal gate MOS technology for post-SiO ₂ gate dielectrics