Molecular beam epitaxy regrowth using a thin in layer for surface passivation

C. K. Peng*, S. L. Tu, S. S. Chen, Chien-Cheng Lin

*此作品的通信作者

研究成果: Article同行評審

7 引文 斯高帕斯(Scopus)

摘要

We report a molecular beam epitaxy regrowth technique using a thin In layer for surface passivation. X-ray photoemission spectroscopy measurements show that an In layer as thin as a few tenths of an angstrom is adequate for the effective protection of the underlying III-V epilayers from carbon and oxygen contamination, while still providing exposure to the atmosphere. C-V depth profilings of the regrown pseudomorphic high electron mobility transistors (PHEMTs) reveal no significant residual charge carriers near the regrowth interface. The regrown PHEMTs with 1 μm gate length have a transconductance as high as 330 mS/mm and ft over 23 GHz.

原文English
頁(從 - 到)2549-2551
頁數3
期刊Applied Physics Letters
DOIs
出版狀態Published - 8 五月 1995

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