Molecular beam epitaxy regrowth and device performance of GaAs-based pseudomorphic high electron mobility transistors using a thin indium passivation layer

Sheu Shung Chen, Chien-Cheng Lin, Chin Kun Peng, Yi Jen Chan

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

Using the technique of molecular beam epitaxy, an indium passivation layer as thin as several tens of angstroms was implemented to protect underlying III-V epilayers from carbon and oxygen contamination. After the subsequent desorption of the passivation layer, GaAs-based pseudomorphic high electron mobility transistors (PHEMTs) were regrown. Negligible residual carriers were detected at the interface between the regrown PHEMTs and the underlying layer, resulting in a superior performance. The regrown PHEMTs with a 1×100 μm2 gate demonstrated an extrinsic transconductance gme as high as 330 mS mm-1. Microwave measurements showed that the current gain cut-off frequency ft was 26.5 GHz and the maximum oscillation frequency fmax was up to 48 GHz. A small-signal equivalent circuit model of the regrown PHEMTs was also evaluated.

原文English
頁(從 - 到)483-487
頁數5
期刊Journal of Materials Science: Materials in Electronics
11
發行號6
DOIs
出版狀態Published - 1 八月 2000

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