Molecular-beam-epitaxy growth of high structural and optical-quality InGaAsN/GaAs quantum wells (QW) has been investigated. The material quality can be improved significantly by using low-temperature growth to suppress the phase separation. High-performance ridge-waveguide InGaAsN/GaAs single QW lasers emitting at 1.3 μm have been demonstrated. Infinite-cavity-length threshold-current density of 400 A/cm 2 , internal quantum efficiency of 96%, and a slope efficiency of 0.67 W/A for a cavity length L= 1 mm were obtained. A TO46 packaging laser shows single lateral-mode kink-free output power of more than 200 mW with a maximum total wallplug efficiency of 29% at room temperature under continuous wave (cw) operation. Moreover, 1.3 μm InGaAsN/GaAs QW vertical-cavity surface-emitting lasers with a threshold current density lower than 2 KA/cm 2 at room temperature have been achieved. We obtained multimode cw output power and slope efficiency in excess of 1 mW and 0.15 W/A, respectively.
|頁（從 - 到）
|Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
|Published - 11月 2004