Molecular-beam-epitaxy growth of high-quality InGaAsN/GaAs quantum well lasers emitting at 1.3 μm

J. S. Wang*, R. S. Hsiao, Kuo-Jui Lin, K. F. Lin, H. Y. Liu, C. M. Lai, L. Wei, C. Y. Liang, J. Y. Chi, A. R. Kovsh, N. A. Maleev, D. A. Livshita, Jenn-Fang Chen, Hsin-Chieh Yu, V. M. Ustinov

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研究成果: Article同行評審

11 引文 斯高帕斯(Scopus)

摘要

Molecular-beam-epitaxy growth of high structural and optical-quality InGaAsN/GaAs quantum wells (QW) has been investigated. The material quality can be improved significantly by using low-temperature growth to suppress the phase separation. High-performance ridge-waveguide InGaAsN/GaAs single QW lasers emitting at 1.3 μm have been demonstrated. Infinite-cavity-length threshold-current density of 400 A/cm 2 , internal quantum efficiency of 96%, and a slope efficiency of 0.67 W/A for a cavity length L= 1 mm were obtained. A TO46 packaging laser shows single lateral-mode kink-free output power of more than 200 mW with a maximum total wallplug efficiency of 29% at room temperature under continuous wave (cw) operation. Moreover, 1.3 μm InGaAsN/GaAs QW vertical-cavity surface-emitting lasers with a threshold current density lower than 2 KA/cm 2 at room temperature have been achieved. We obtained multimode cw output power and slope efficiency in excess of 1 mW and 0.15 W/A, respectively.

原文English
頁(從 - 到)2663-2667
頁數5
期刊Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
22
發行號6
DOIs
出版狀態Published - 11月 2004

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