Molecular beam epitaxial growth and characterization of InSb on Si

J. I. Chyi; D. Biswas; S. V. Iyer; N. S. Kumar; H. Morkoç; R. Bean; K. Zanio; H. Y. Lee; Haydn Chen

doi:10.1063/1.100784

Molecular beam epitaxial growth and characterization of InSb on Si

J. I. Chyi^*, D. Biswas, S. V. Iyer, N. S. Kumar, H. Morkoç, R. Bean, K. Zanio, H. Y. Lee, Haydn Chen

^*此作品的通信作者

國際半導體產業學院

研究成果: Article › 同行評審

76 引文斯高帕斯（Scopus）

摘要

Epitaxial layers of InSb have been grown on Si substrates by molecular beam epitaxy. Room-temperature electron mobilities are 48 000 and 39 000 cm ² /V s for 3.2 μm-thick InSb with and without a thin GaAs buffer, respectively. The corresponding carrier concentrations are 2.2×10 ¹⁶ and 2.7×10 ¹⁶ cm ^-3 . A sample with an InSb thickness of 8 μm exhibited room-temperature mobilities as high as 55 000 cm ² /V s with carrier concentrations of about 2.0×10 ¹⁶ cm ^-3 . A sharp band-edge transmission spectrum is observed at room temperature for the 8 μm layer.

原文	English
頁（從 - 到）	1016-1018
頁數	3
期刊	Applied Physics Letters
卷	54
發行號	11
DOIs	https://doi.org/10.1063/1.100784
出版狀態	Published - 1 12月 1989

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@article{fd317404b1d74e959421ee2bbea8afb9,

title = "Molecular beam epitaxial growth and characterization of InSb on Si",

abstract = " Epitaxial layers of InSb have been grown on Si substrates by molecular beam epitaxy. Room-temperature electron mobilities are 48 000 and 39 000 cm 2 /V s for 3.2 μm-thick InSb with and without a thin GaAs buffer, respectively. The corresponding carrier concentrations are 2.2×10 16 and 2.7×10 16 cm -3 . A sample with an InSb thickness of 8 μm exhibited room-temperature mobilities as high as 55 000 cm 2 /V s with carrier concentrations of about 2.0×10 16 cm -3 . A sharp band-edge transmission spectrum is observed at room temperature for the 8 μm layer. ",

author = "Chyi, {J. I.} and D. Biswas and Iyer, {S. V.} and Kumar, {N. S.} and H. Morko{\c c} and R. Bean and K. Zanio and Lee, {H. Y.} and Haydn Chen",

year = "1989",

month = dec,

day = "1",

doi = "10.1063/1.100784",

language = "English",

volume = "54",

pages = "1016--1018",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "11",

}

TY - JOUR

T1 - Molecular beam epitaxial growth and characterization of InSb on Si

AU - Chyi, J. I.

AU - Biswas, D.

AU - Iyer, S. V.

AU - Kumar, N. S.

AU - Morkoç, H.

AU - Bean, R.

AU - Zanio, K.

AU - Lee, H. Y.

AU - Chen, Haydn

PY - 1989/12/1

Y1 - 1989/12/1

N2 - Epitaxial layers of InSb have been grown on Si substrates by molecular beam epitaxy. Room-temperature electron mobilities are 48 000 and 39 000 cm 2 /V s for 3.2 μm-thick InSb with and without a thin GaAs buffer, respectively. The corresponding carrier concentrations are 2.2×10 16 and 2.7×10 16 cm -3 . A sample with an InSb thickness of 8 μm exhibited room-temperature mobilities as high as 55 000 cm 2 /V s with carrier concentrations of about 2.0×10 16 cm -3 . A sharp band-edge transmission spectrum is observed at room temperature for the 8 μm layer.

AB - Epitaxial layers of InSb have been grown on Si substrates by molecular beam epitaxy. Room-temperature electron mobilities are 48 000 and 39 000 cm 2 /V s for 3.2 μm-thick InSb with and without a thin GaAs buffer, respectively. The corresponding carrier concentrations are 2.2×10 16 and 2.7×10 16 cm -3 . A sample with an InSb thickness of 8 μm exhibited room-temperature mobilities as high as 55 000 cm 2 /V s with carrier concentrations of about 2.0×10 16 cm -3 . A sharp band-edge transmission spectrum is observed at room temperature for the 8 μm layer.

UR - http://www.scopus.com/inward/record.url?scp=36549103364&partnerID=8YFLogxK

U2 - 10.1063/1.100784

DO - 10.1063/1.100784

M3 - Article

AN - SCOPUS:36549103364

VL - 54

SP - 1016

EP - 1018

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 11

ER -

Molecular beam epitaxial growth and characterization of InSb on Si

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