Molecular beam epitaxial growth and characterization of InSb on Si

J. I. Chyi*, D. Biswas, S. V. Iyer, N. S. Kumar, H. Morkoç, R. Bean, K. Zanio, H. Y. Lee, Haydn Chen

*此作品的通信作者

研究成果: Article同行評審

76 引文 斯高帕斯(Scopus)

摘要

Epitaxial layers of InSb have been grown on Si substrates by molecular beam epitaxy. Room-temperature electron mobilities are 48 000 and 39 000 cm 2 /V s for 3.2 μm-thick InSb with and without a thin GaAs buffer, respectively. The corresponding carrier concentrations are 2.2×10 16 and 2.7×10 16 cm -3 . A sample with an InSb thickness of 8 μm exhibited room-temperature mobilities as high as 55 000 cm 2 /V s with carrier concentrations of about 2.0×10 16 cm -3 . A sharp band-edge transmission spectrum is observed at room temperature for the 8 μm layer.

原文English
頁(從 - 到)1016-1018
頁數3
期刊Applied Physics Letters
54
發行號11
DOIs
出版狀態Published - 1 12月 1989

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