Moisture-induced material instability of porous organosilicate glass

T. C. Chang; C. W. Chen; Po-Tsun Liu; Y. S. Mor; H. M. Tsai; T. M. Tsai; S. T. Yan; C. H. Tu; Tseung-Yuen Tseng; S. M. Sze

doi:10.1149/1.1557032

Moisture-induced material instability of porous organosilicate glass

T. C. Chang^*, C. W. Chen, Po-Tsun Liu, Y. S. Mor, H. M. Tsai, T. M. Tsai, S. T. Yan, C. H. Tu, Tseung-Yuen Tseng, S. M. Sze

^*此作品的通信作者

光電工程學系

研究成果: Article › 同行評審

14 引文斯高帕斯（Scopus）

摘要

The mechanism of leakage current of porous organosilicate glass (POSG) with O₂ plasma ashing is investigated. The O₂ plasma ashing often deteriorates the POSG film, causing moisture uptake. We find that the leakage-current mechanism of POSG transforms from Schottky emission into ionic conduction after O₂ plasma treatment. The mobile ions (H⁺, OH^-) supported by absorbing moisture move easily when an external electric field is applied to POSG film, which leads to the ionic conduction leakage current across the moisture-absorbing POSG film. Hence, the leakage current density is drastically increased about four to five orders of magnitude compared with untreated POSG film.

原文	American English
期刊	Electrochemical and Solid-State Letters
卷	6
發行號	4
DOIs	https://doi.org/10.1149/1.1557032
出版狀態	Published - 1 4月 2003

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title = "Moisture-induced material instability of porous organosilicate glass",

abstract = "The mechanism of leakage current of porous organosilicate glass (POSG) with O2 plasma ashing is investigated. The O2 plasma ashing often deteriorates the POSG film, causing moisture uptake. We find that the leakage-current mechanism of POSG transforms from Schottky emission into ionic conduction after O2 plasma treatment. The mobile ions (H+, OH-) supported by absorbing moisture move easily when an external electric field is applied to POSG film, which leads to the ionic conduction leakage current across the moisture-absorbing POSG film. Hence, the leakage current density is drastically increased about four to five orders of magnitude compared with untreated POSG film.",

author = "Chang, {T. C.} and Chen, {C. W.} and Po-Tsun Liu and Mor, {Y. S.} and Tsai, {H. M.} and Tsai, {T. M.} and Yan, {S. T.} and Tu, {C. H.} and Tseung-Yuen Tseng and Sze, {S. M.}",

year = "2003",

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doi = "10.1149/1.1557032",

language = "American English",

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TY - JOUR

T1 - Moisture-induced material instability of porous organosilicate glass

AU - Chang, T. C.

AU - Chen, C. W.

AU - Liu, Po-Tsun

AU - Mor, Y. S.

AU - Tsai, H. M.

AU - Tsai, T. M.

AU - Yan, S. T.

AU - Tu, C. H.

AU - Tseng, Tseung-Yuen

AU - Sze, S. M.

PY - 2003/4/1

Y1 - 2003/4/1

N2 - The mechanism of leakage current of porous organosilicate glass (POSG) with O2 plasma ashing is investigated. The O2 plasma ashing often deteriorates the POSG film, causing moisture uptake. We find that the leakage-current mechanism of POSG transforms from Schottky emission into ionic conduction after O2 plasma treatment. The mobile ions (H+, OH-) supported by absorbing moisture move easily when an external electric field is applied to POSG film, which leads to the ionic conduction leakage current across the moisture-absorbing POSG film. Hence, the leakage current density is drastically increased about four to five orders of magnitude compared with untreated POSG film.

AB - The mechanism of leakage current of porous organosilicate glass (POSG) with O2 plasma ashing is investigated. The O2 plasma ashing often deteriorates the POSG film, causing moisture uptake. We find that the leakage-current mechanism of POSG transforms from Schottky emission into ionic conduction after O2 plasma treatment. The mobile ions (H+, OH-) supported by absorbing moisture move easily when an external electric field is applied to POSG film, which leads to the ionic conduction leakage current across the moisture-absorbing POSG film. Hence, the leakage current density is drastically increased about four to five orders of magnitude compared with untreated POSG film.

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U2 - 10.1149/1.1557032

DO - 10.1149/1.1557032

M3 - Article

AN - SCOPUS:0037379699

SN - 1099-0062

VL - 6

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 4

ER -

Moisture-induced material instability of porous organosilicate glass

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