Modulation of Interface and Bulk States in Amorphous InGaZnO Thin-Film Transistors with Double Stacked Channel Layers

Runze Zhan, Chengyuan Dong, Bo-Ru Yang, Han-Ping Shieh

研究成果: Article同行評審

11 引文 斯高帕斯(Scopus)

摘要

A high-performance amorphous InGaZnO (a-IGZO) thin-film transistor (TFT) was achieved using a double stacked channel layer (DSCL). An oxygen-poor IGZO film was deposited in pure argon ambient as a buffer layer to prevent oxygen plasma bombardment and improve device performance. An oxygen-rich IGZO film was then deposited on top of that buffer layer to modulate device stability. With this structure, an interface with low oxygen-plasma-induced damage and few oxygen vacancies in the bulk was achieved using DSCL, leading to a higher stability of the threshold voltage. (C) 2013 The Japan Society of Applied Physics
原文English
文章編號UNSP 090205
期刊Japanese Journal of Applied Physics
52
發行號9
DOIs
出版狀態Published - 9月 2013

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