@inproceedings{ddc3ede01e484b448e86790bb741fce2,
title = "Modified cone shapes on patterned sapphire substrates for high performance InGaN LED applications",
abstract = "In this study, GaN-based light emitting diodes (LEDs) were prepared on the cone-shaped patterned sapphire substrates (PSSs) by metal-organic chemical vapor deposition. To improve the epilayer quality and device performance of LEDs, the PSSs were further wet etched to form the modified top-tip cone shapes. With increasing the wet etching time to 3 min, the LED grown on the cone-shaped PSS has 53% and 8% enhancement in light output (@ 20 mA) as compared with that on conventional sapphire substrate (CSS) and the cone-shaped PSS without wet etching, respectively.",
keywords = "cone shape, light-emitting diode, patterned sapphire substrate, wet etching",
author = "Ray-Hua Horng and Hsueh, {Hsu Hung} and Ou, {Sin Liang} and Cheng, {Chiao Yang} and Wuu, {Dong Sing}",
year = "2013",
doi = "10.1109/ICAIT.2013.6621500",
language = "English",
isbn = "9781479904655",
series = "2013 IEEE 6th International Conference on Advanced Infocomm Technology, ICAIT 2013",
pages = "73--74",
booktitle = "2013 IEEE 6th International Conference on Advanced Infocomm Technology, ICAIT 2013",
note = "2013 IEEE 6th International Conference on Advanced Infocomm Technology, ICAIT 2013 ; Conference date: 06-07-2013 Through 09-07-2013",
}