Modified cone shapes on patterned sapphire substrates for high performance InGaN LED applications

Ray-Hua Horng, Hsu Hung Hsueh, Sin Liang Ou, Chiao Yang Cheng, Dong Sing Wuu

研究成果: Conference contribution同行評審

摘要

In this study, GaN-based light emitting diodes (LEDs) were prepared on the cone-shaped patterned sapphire substrates (PSSs) by metal-organic chemical vapor deposition. To improve the epilayer quality and device performance of LEDs, the PSSs were further wet etched to form the modified top-tip cone shapes. With increasing the wet etching time to 3 min, the LED grown on the cone-shaped PSS has 53% and 8% enhancement in light output (@ 20 mA) as compared with that on conventional sapphire substrate (CSS) and the cone-shaped PSS without wet etching, respectively.

原文English
主出版物標題2013 IEEE 6th International Conference on Advanced Infocomm Technology, ICAIT 2013
頁面73-74
頁數2
DOIs
出版狀態Published - 29 11月 2013
事件2013 IEEE 6th International Conference on Advanced Infocomm Technology, ICAIT 2013 - Hsinchu, Taiwan
持續時間: 6 7月 20139 7月 2013

出版系列

名字2013 IEEE 6th International Conference on Advanced Infocomm Technology, ICAIT 2013

Conference

Conference2013 IEEE 6th International Conference on Advanced Infocomm Technology, ICAIT 2013
國家/地區Taiwan
城市Hsinchu
期間6/07/139/07/13

指紋

深入研究「Modified cone shapes on patterned sapphire substrates for high performance InGaN LED applications」主題。共同形成了獨特的指紋。

引用此